| ²é¿´: 419 | »Ø¸´: 3 | ||
| µ±Ç°Ö»ÏÔʾÂú×ãÖ¸¶¨Ìõ¼þµÄ»ØÌû£¬µã»÷ÕâÀï²é¿´±¾»°ÌâµÄËùÓлØÌû | ||
yj656ľ³æ (ÖøÃûдÊÖ)
|
[ÇóÖú]
°ïæ²éÏÂÕâÁ½ÆªÎÄÏ×µÄSCI¼ìË÷ºÅ
|
|
|
J. Yang, Y. Shi, H. Zhong, et al. Preparation of sacrificial layer for MEMS devices by lift-off technology[J]. Microsystem Technologies Microsystem Technologies, 2014, 20(2): 259-263 J. Yang, X.Q. Jiao, R. Zhang, et al. Growth of AlN films as a function of Temperature on Mo films deposited by different techniques Journal of Electronic Materials, 2014, 43(2): 369-374 Íò·Ö¸Ðл£¡ |
» ²ÂÄãϲ»¶
²ÄÁÏ292µ÷¼Á
ÒѾÓÐ11È˻ظ´
269ר˶Çóµ÷¼Á
ÒѾÓÐ9È˻ظ´
0703»¯Ñ§/290Çóµ÷¼Á/±¾¿Æ¾Àú·á¸»/¹¤¿ÆÒ²¿É
ÒѾÓÐ8È˻ظ´
0856²ÄÁÏ»¯¹¤µ÷¼Á ×Ü·Ö330
ÒѾÓÐ7È˻ظ´
312Çóµ÷¼Á
ÒѾÓÐ13È˻ظ´
315µ÷¼Á
ÒѾÓÐ5È˻ظ´
307Çóµ÷¼Á
ÒѾÓÐ8È˻ظ´
²ÄÁÏÓ뻯¹¤¿¼Ñе÷¼Á
ÒѾÓÐ16È˻ظ´
299Çóµ÷¼Á
ÒѾÓÐ3È˻ظ´
²ÄÁÏÇóµ÷¼Á
ÒѾÓÐ8È˻ظ´
yj656
ľ³æ (ÖøÃûдÊÖ)
- Ó¦Öú: 19 (СѧÉú)
- ½ð±Ò: 3239.7
- ºì»¨: 2
- Ìû×Ó: 1782
- ÔÚÏß: 86.4Сʱ
- ³æºÅ: 973018
- ×¢²á: 2010-03-16
- רҵ: °ëµ¼Ìå΢ÄÉ»úµçÆ÷¼þÓëϵͳ
3Â¥2014-05-19 10:07:40
baiyuefei
°æÖ÷ (ÎÄѧ̩¶·)
·çÑ©
- LS-EPI: 1647
- Ó¦Öú: 4642 (¸±½ÌÊÚ)
- ¹ó±ö: 46.969
- ½ð±Ò: 658108
- É¢½ð: 11616
- ºì»¨: 995
- ɳ·¢: 81
- Ìû×Ó: 69424
- ÔÚÏß: 13328.4Сʱ
- ³æºÅ: 676696
- ×¢²á: 2008-12-18
- ÐÔ±ð: GG
- רҵ: ºÏ³ÉÒ©Îﻯѧ
- ¹ÜϽ: Óлú½»Á÷
2Â¥2014-05-19 10:00:27
·ãÒ¶1012
гæ (ÖøÃûдÊÖ)
- Ó¦Öú: 169 (¸ßÖÐÉú)
- ½ð±Ò: 2831.6
- É¢½ð: 116
- ºì»¨: 7
- Ìû×Ó: 1495
- ÔÚÏß: 149.5Сʱ
- ³æºÅ: 1738901
- ×¢²á: 2012-04-05
- ÐÔ±ð: GG
- רҵ: »úеĦ²ÁѧÓë±íÃæ¼¼Êõ
4Â¥2014-05-19 16:00:02














»Ø¸´´ËÂ¥