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| Deep level transient spectroscopy (DLTS, D.V. Lang, J. Appl. Phys. 45, 3023 (1974)) is a very sensitive method to study deep levels in semiconductors. The method is based on the capacitance change of a reverse biased diode when deep levels emit their carriers after they were charged by a forward bias pulse. The emission rate is temperature dependent and characteristic for each type of defect. From the temperature dependence of the emission rate the activation energy of a deep level can be deduced. |

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