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dongmaojin

木虫 (小有名气)

[交流] 【求助】硅中的深能级杂质怎么进行测量

硅中掺入的金或是镍、铂等深能级杂质怎么测试其能级所在位置,和浓度,文献报道说可以采用DLTS,不过这种方法是否简单易行,对硅片的电阻率有无要求?

[ Last edited by zt970831 on 2008-1-26 at 18:21 ]
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wolfliu

木虫 (著名写手)

自信,诚信,求实,方法。

There are many more varieties which are widely used, like e.g. deep level optical spectroscopy (DLOS, A. Chantre et al., Phys. Rev. B 23, 5335 (1981)), or relatively unknown, like e.g. Acousto-Electric Deep Level Transient Spectroscopy (AE-DLTS) or Q-DLTS
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4楼2008-01-26 11:20:20
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wolfliu

木虫 (著名写手)

自信,诚信,求实,方法。

DDLTS (double correlation deep level transient spectroscopy, H.Lefevre and M. Schulz, Appl. Phys. 12, 45 (1977)) is a variation of DLTS to get field dependent emission data and/or depth profiles of a deep level.
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2楼2008-01-26 11:19:26
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wolfliu

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自信,诚信,求实,方法。

★ ★ ★
zt970831(金币+3,VIP+0):谢谢您的热心应助,欢迎常来物理版:)
Deep level transient spectroscopy (DLTS, D.V. Lang, J. Appl. Phys. 45, 3023 (1974)) is a very sensitive method to study deep levels in semiconductors. The method is based on the capacitance change of a reverse biased diode when deep levels emit their carriers after they were charged by a forward bias pulse. The emission rate is temperature dependent and characteristic for each type of defect. From the temperature dependence of the emission rate the activation energy of a deep level can be deduced.
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3楼2008-01-26 11:19:48
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wolfliu

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自信,诚信,求实,方法。

A good book on DLTS and related techniques is "The Electrical Characterisation of Semiconductors: Majority Carriers and Electron States" by P. Blood and J.W. Orton, Academic Press London (1992) (ISBN 0-12-528627-9)
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5楼2008-01-26 11:20:27
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