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xunmengyuan: ½ð±Ò+5, ¡ïÓаïÖú 2013-08-27 15:46:58
hanches: ½ð±Ò+2, ÈÈÐÄÓ¦ÖúÓн±~~~ 2013-08-27 20:25:05
A SiO2 layer was used as a buffer layer between channel layer and gate insulator to avoid the defects picked up when the samples were switched from ALD to RF sputtering.
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To prevent the defects picked up, a SiO2 layer was used to be a buffer layer between channel layer and gate insulator, when the samples were switched from ALD to RF sputtering.¾ä×Ó²»ÒªÌ«³¤£¬¿ÉÒÔÊʵ±·Ö¸î£¬ÕâÑù¿´×ÅÊæ·þһЩ
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hanches: ½ð±Ò+2, ÈÈÐÄÓ¦ÖúÓн±~~~ 2013-08-27 20:25:35
A transition layer of SiO2 was applied to prevent the picked-up defects between the channel layer and the gate insulator when the samples were switched from ALD to RF sputtering.

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