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xunmengyuan

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xchzhi

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【答案】应助回帖

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感谢参与,应助指数 +1
xunmengyuan: 金币+5, 有帮助 2013-08-27 15:46:58
hanches: 金币+2, 热心应助有奖~~~ 2013-08-27 20:25:05
A SiO2 layer was used as a buffer layer between channel layer and gate insulator to avoid the defects picked up when the samples were switched from ALD to RF sputtering.
这样是否好些。
2楼2013-08-27 14:15:05
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xionglll

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感谢参与,应助指数 +1
xunmengyuan: 金币+5, ★★★很有帮助 2013-08-27 15:47:11
hanches: 金币+2, 感谢应助,BB奖励~~~ 2013-08-27 20:25:13
To prevent the defects picked up, a SiO2 layer was used to be a buffer layer between channel layer and gate insulator, when the samples were switched from ALD to RF sputtering.句子不要太长,可以适当分割,这样看着舒服一些
3楼2013-08-27 14:36:32
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phu_grassman

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hanches: 金币+2, 热心应助有奖~~~ 2013-08-27 20:25:35
A transition layer of SiO2 was applied to prevent the picked-up defects between the channel layer and the gate insulator when the samples were switched from ALD to RF sputtering.

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4楼2013-08-27 19:24:44
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xunmengyuan

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送红花一朵
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5楼2013-08-27 20:50:14
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martius

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xunmengyuan(zhtear99代发): 金币+2, 鼓励热心应助哈~ 2013-09-08 20:02:17
xunmengyuan(zhtear99代发): 金币+3, 鼓励热心应助哈~ 2013-09-08 20:02:35
A SiO2 layer served as the buffer layer in between the channel layer and the gate insulator to prevent the defects picked up when the samples switched from ALD to RF sputtering.
6楼2013-09-02 09:38:01
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