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xunmengyuan: ½ð±Ò+5, ¡ïÓаïÖú 2013-08-27 15:46:58
hanches: ½ð±Ò+2, ÈÈÐÄÓ¦ÖúÓн±~~~ 2013-08-27 20:25:05
A SiO2 layer was used as a buffer layer between channel layer and gate insulator to avoid the defects picked up when the samples were switched from ALD to RF sputtering.
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xunmengyuan: ½ð±Ò+5, ¡ï¡ï¡ïºÜÓаïÖú 2013-08-27 15:47:11
hanches: ½ð±Ò+2, ¸ÐлӦÖú£¬BB½±Àø~~~ 2013-08-27 20:25:13
To prevent the defects picked up, a SiO2 layer was used to be a buffer layer between channel layer and gate insulator, when the samples were switched from ALD to RF sputtering.¾ä×Ó²»ÒªÌ«³¤£¬¿ÉÒÔÊʵ±·Ö¸î£¬ÕâÑù¿´×ÅÊæ·þһЩ
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hanches: ½ð±Ò+2, ÈÈÐÄÓ¦ÖúÓн±~~~ 2013-08-27 20:25:35
A transition layer of SiO2 was applied to prevent the picked-up defects between the channel layer and the gate insulator when the samples were switched from ALD to RF sputtering.

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4Â¥2013-08-27 19:24:44
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xunmengyuan(zhtear99´ú·¢): ½ð±Ò+2, ¹ÄÀøÈÈÐÄÓ¦Öú¹þ~ 2013-09-08 20:02:17
xunmengyuan(zhtear99´ú·¢): ½ð±Ò+3, ¹ÄÀøÈÈÐÄÓ¦Öú¹þ~ 2013-09-08 20:02:35
A SiO2 layer served as the buffer layer in between the channel layer and the gate insulator to prevent the defects picked up when the samples switched from ALD to RF sputtering.
6Â¥2013-09-02 09:38:01
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