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Unfortunately, the discussion of impedance measurements is always unsatisfaying.
There is a fundamental misunderstanding about the concept of constant phase element (CPE). The definition given by Eq.2 is correct, but Cdl is never in unit of Farad but in Fs^n, because pulsation w is in s^-1, and w^n in s^-n!
Then comparing Cdl values corresponding to different values of n is totally meaningless. As a consequence, Table 1 is not acceptable in the present form for the following reasons:
1/ Cdl is not in mF and cannot be identified as the double layer capacitance;
2/ n values are of the order of 0.7 suggesting the layer to be porous: the CPE representation leads to a good fit but remains purely formal without direct information about physical quantities. More sophisticated impedance models could be considered to get information on interfacial quantities of interest.
3/ The Cf parameter with so high values is hardly attribuable to an actual film capacitance. Knowing that the dielectric permittivity of tin oxide turns around 10, a 1 m thick layer would have a 10 nF/cm2 capacitance, and 10  F/cm2 if 1 nm thick only! Never in mF.
In conclusion, frequency analysis of impedance data according to the electrical circuit in Fig.5 is purely formal, with the consequence that the parameters in Table 1 have no physical meaning.
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