| 查看: 5382 | 回复: 117 | ||||
| 【奖励】 本帖被评价106次，作者xiejf增加金币 83.2 个 | ||||
| 当前只显示满足指定条件的回帖，点击这里查看本话题的所有回帖 | ||||
xiejf专家顾问 (文学泰斗)
|
[资源]
Nature最新研究进展：石墨烯-氮化硼平面异质结构用作原子层厚度的电路
|
|||
|
8月30日更新的Nature杂志刊发了康奈尔大学的研究成果，文章报导了通过平面生长原子层厚度的石墨烯和氮化硼的异质结构，实现了原子层厚度的电路。现上传正文和文章的支持信息与大家分享。 摘要： Precise spatial control over the electrical properties of thin films is the key capability enabling the production of modern integrated circuitry. Although recent advances in chemical vapour deposition methods have enabled the large-scale production of both intrinsic and doped graphene, aswell as hexagonal boron nitride (h-BN), controlled fabrication of lateral heterostructures in these truly atomically thin systems has not been achieved. Graphene/h-BN interfaces are of particular interest, because it is known that areas of different atomic compositions may coexist within continuous atomically thin films and that, with proper control, the bandgap and magnetic properties can be precisely engineered. However, previously reported approaches for controlling these interfaces have fundamental limitations and cannot be easily integrated with conventional lithography. Here we report a versatile and scalable process, which we call ‘patterned regrowth’, that allows for the spatially controlled synthesis of lateral junctions between electrically conductive graphene and insulating h-BN, as well as between intrinsic and substitutionally doped graphene.We demonstrate that the resulting films formmechanically continuous sheets across these heterojunctions. Conductance measurements confirm laterally insulating behaviour forh-BN regions, while the electrical behaviour of both doped and undoped graphene sheets maintain excellent properties, with low sheet resistances and high carrier mobilities. Our results represent an important step towards developing atomically thin integrated circuitry and enable the fabrication of electrically isolated active and passive elements embedded in continuous, one-atom-thick sheets, which could be manipulated and stacked to form complex devices at the ultimate thickness limit. 。  Graphene and boron nitride lateral heterostructures for atomically thin circuitry.jpg [ 来自科研家族 材料家族 ]  nature11408-f1.2.jpg  nature11408-f2.2.jpg  nature11408-f3.2.jpg  nature11408-f4.2.jpg  nature11408-f5.2.jpg [ Last edited by xiejf on 2012-8-30 at 08:31 ] |
回复此楼» 本帖附件资源列表
-
欢迎监督和反馈：小木虫仅提供交流平台，不对该内容负责。
本内容由用户自主发布，如果其内容涉及到知识产权问题，其责任在于用户本人，如对版权有异议，请联系邮箱：xiaomuchong@tal.com - 附件 1 : Grapheneandboronnitridelateralheterostructuresforatomicallythincircuitry-S.pdf
- 附件 2 : Grapheneandboronnitridelateralheterostructuresforatomicallythincircuitry.pdf
2012-08-30 08:29:05, 5.47 M
2012-08-30 08:29:07, 2.3 M
» 收录本帖的淘帖专辑推荐
» 猜你喜欢
济南大学国家优青课题组 2026 调剂招生来啦
已经有0人回复
-
武汉纺织大学_化学院官方调剂群-院士团队招生-学生自由度高发展好-欢迎各位同学
已经有0人回复
-
金属材料论文润色/翻译怎么收费?
已经有107人回复
-
西华大学 化学 调剂有名额
已经有0人回复
-
上海应用技术大学招生调剂研究生
已经有7人回复
-
南京晓庄学院绿色能源材料团队招生
已经有0人回复
-
南京晓庄学院绿色能源材料团队招生
已经有0人回复
» 本主题相关商家推荐: (我也要在这里推广)
» 本主题相关价值贴推荐，对您同样有帮助:
- Nature Chemistry 新作太阳能电池设计
已经有189人回复
- 分享energy and environment science关于石墨烯量子点的综述
已经有217人回复
- 关于2012.8 nature、science上关于锂空气电池的两篇最新论文的心得
已经有21人回复
- Energy Environ. Sci.最新综述：石墨烯基催化剂
已经有255人回复
- Nature最新综述：用于光伏的材料介面工程
已经有271人回复
- Chem. Soc. Rev.最新综述：石墨烯电化学---从基本概念到广泛应用
已经有273人回复
- Adv. Funct. Mater.最新综述：一维金属氧化物纳米结构：合成、表征及应用研究进展
已经有647人回复
- 石墨烯的制备
已经有11人回复
38楼2012-09-01 02:49:29
11楼2012-08-30 14:16:18
简单回复
aaq28002楼
2012-08-30 09:10
回复
五星好评 顶一下，感谢分享！
dgf20083楼
2012-08-30 11:14
回复
五星好评 顶一下，感谢分享！
瞬～4楼
2012-08-30 11:21
回复
五星好评 顶一下，感谢分享！
2012-08-30 11:52
回复
五星好评 顶一下，感谢分享！
2012-08-30 11:54
回复
五星好评 顶一下，感谢分享！
2012-08-30 11:54
回复
顶一下，感谢分享！
韩大脚8楼
2012-08-30 12:01
回复
五星好评 顶一下，感谢分享！
2012-08-30 12:34
回复
五星好评 顶一下，感谢分享！
njrlfu10楼
2012-08-30 14:05
回复
五星好评 顶一下，感谢分享！
牛虻吹泡泡12楼
2012-08-30 14:24
回复
五星好评 顶一下，感谢分享！
yf.li13楼
2012-08-30 14:26
回复
五星好评 顶一下，感谢分享！
yf.li14楼
2012-08-30 14:27
回复
顶一下，感谢分享！
