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xiejf

专家顾问 (文学泰斗)

[资源] Nature最新研究进展：石墨烯-氮化硼平面异质结构用作原子层厚度的电路

8月30日更新的Nature杂志刊发了康奈尔大学的研究成果，文章报导了通过平面生长原子层厚度的石墨烯和氮化硼的异质结构，实现了原子层厚度的电路。现上传正文和文章的支持信息与大家分享。
摘要：
Precise spatial control over the electrical properties of thin films is
the key capability enabling the production of modern integrated
circuitry. Although recent advances in chemical vapour deposition
methods have enabled the large-scale production of both intrinsic
and doped graphene, aswell as hexagonal boron nitride (h-BN),
controlled fabrication of lateral heterostructures in these truly
atomically thin systems has not been achieved. Graphene/h-BN
interfaces are of particular interest, because it is known that areas
of different atomic compositions may coexist within continuous
atomically thin films and that, with proper control, the bandgap
and magnetic properties can be precisely engineered. However,
previously reported approaches for controlling these interfaces have
fundamental limitations and cannot be easily integrated with conventional
lithography. Here we report a versatile and scalable
process, which we call ‘patterned regrowth’, that allows for the
spatially controlled synthesis of lateral junctions between electrically
conductive graphene and insulating h-BN, as well as between
intrinsic and substitutionally doped graphene.We demonstrate that
the resulting films formmechanically continuous sheets across these
heterojunctions. Conductance measurements confirm laterally
insulating behaviour forh-BN regions, while the electrical behaviour
of both doped and undoped graphene sheets maintain excellent
properties, with low sheet resistances and high carrier mobilities.
Our results represent an important step towards developing
atomically thin integrated circuitry and enable the fabrication
of electrically isolated active and passive elements embedded in
continuous, one-atom-thick sheets, which could be manipulated
and stacked to form complex devices at the ultimate thickness limit.
。

Graphene and boron nitride lateral heterostructures for atomically thin circuitry.jpg

[ 来自科研家族材料家族 ]

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[ Last edited by xiejf on 2012-8-30 at 08:31 ]

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附件 1 : Grapheneandboronnitridelateralheterostructuresforatomicallythincircuitry-S.pdf

2012-08-30 08:29:05, 5.47 M