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apl审稿意见求助
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编辑意见：The reviewer was favorably impressed, but has made further suggestions for improvements. The reviewer's comments are included below and/or attached. Please follow the suggestions where you find them appropriate and return the revised manuscript for publication. Please indicate how the manuscript has been revised in a separate Response Letter file so that the editors can see whether you have complied with the reviewer's comments. Please use ADD FILE to upload the Response Letter file and use REPLACE for any files that have been revised or changed. Revised manuscripts must be submitted through the online submission system. They are not accepted by email. 审稿人意见：Reviewer Comments: Reviewer #1 Evaluations: RECOMMENDATION: Publish in APL with optional revision Paper Interesting: Yes Original Paper: Yes Sufficient Physics: Yes Well Organized: Yes Clear and Error Free: Yes Conclusions Supported: Yes Appropriate Title: Yes Good Abstract: Yes Satisfactory English: Yes Adequate References: Yes Clear Figures: Yes OVERALL RATING: Good Reviewer #1 (Comments to the Author): The processing impact on charge density of AlGaN/AlN/GaN HFET grown by MBE on sapphire substrates were reported and explained by authors. The model was that the stress-enhanced metal (Ti, Ni, and Au) diffusion into strained AlGaN barrier layer is the physics behind the observations. Authors have spent some effort to address my previous comments, including. • The evaluation of metal diffusion into barriers. Authors said further and systematic study is needed. • The quality of the MBE grown epi structure was accessed by author as " demonstrated that the quality ... is perfect." • The electrical quality of the epi structure before processing was measured by Hall at varied temp, with data shown stable carrier conc, indicating the quality of the epi. Authors may choose publish it as is and follow up with data from further systematic study. 各位大神看看有希望么？ |
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