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livesun木虫 (小有名气)
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[求助]
求高手把下面的两段文字翻译成英语，谢谢了
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对比硅薄膜的厚度为10、40、80 nm的3种器件性能可以看到,当硅的厚度为40 nm时,器件具有最高的载流子迁移率、最大的饱和电流和绝对值最小的阈值电压。对于同样结构的晶体管,在绝缘层厚度不变时,由栅极偏压感应出来的增强区域厚度通常在几个分子层之间。而本征区和耗尽区的载流子浓度比较低,是限制晶体管载流子迁移率提高的主要因素。当厚度大于40nm时,有源层厚度的增大不但分去一部分栅电压而且还增大了源-漏电极的接触电阻,从而不利于器件性能的提高。当有源层厚度小于40 nm以后器件的性能开始降低,有源层上表面的表面态会使有机材料的隙态浓度增加从而对沟道载流子迁移率产生不良影响以及使器件的阈值电压增大,采用厚度过低的半导体层的器件也会由于半导体薄膜本身的起伏度而导致器件性能下降。 载流子的迁移率大小受有机半导体结构和排列的影响很大,参考文献5也对此方面有相关的论述。经AB溶液处理以后,SiO2的表面形貌有所改变,表面的能态降低。用原子力显微镜(AFM)观察绝缘薄膜层的表面形貌。图7是经过清洗处理后的SiO2层的表面形貌图。图8是AB溶液处理的SiO2层表面形貌图。一般认为,晶体管器件中绝缘层的表面粗糙程度是衡量器件性能,即载流子迁移率大小的一个重要指标。绝缘层的表面光滑,平整度好,则绝缘膜中的表面缺陷(如针孔和陷阱)就少,便于载流子的通过;反之,载流子会被绝缘膜中的表面缺陷所捕获,从而降低器件的迁移率。AB溶液处理改变了绝缘层表面所蒸镀的酞菁铜膜的生长性质,可以使二氧化硅的表面变成更加疏水的状态,降低了表面自由能,从而更有利于C薄膜在基片上的吸附。通过在源漏金电极和SiO2之间引入有机、低介电的AB薄膜,起到了在真空蒸镀金薄膜的过程中阻挡金原子向SiO2硅层的扩散的作用,从而改善了绝缘性。AB溶液处理后为绝缘层提供了更为平滑的表面,降低了位于介面处的缺陷浓度,从而优化了薄膜的生长行为,使界面处的C分子排列更为有序,进而提高了场效应迁移率。 |
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【答案】应助回帖
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爱与雨下: 金币+2 2012-06-12 19:14:08
livesun: 金币+200, 翻译EPI+1, 40 2012-06-13 09:23:54
爱与雨下: 金币+2 2012-06-12 19:14:08
livesun: 金币+200, 翻译EPI+1, 40 2012-06-13 09:23:54
| Comparison of silicon thin film thickness of 10, 40, 80 nm 3 kinds of device performance can be seen, when 40 nm is the thickness of the Silicon, the device has the highest saturation current of the charge carrier mobility, maximum absolute value and minimum threshold voltage. For the transistors of the same structure, thickness of insulation is intact, by the thickness of the regional grid bias voltage induction typically between a few molecular layers. Intrinsic carrier concentration is relatively low and drain area, is the main factor limiting transistors increase carrier mobility. When the thickness is greater than 40nm, active layer thickness increase not only to part of the gate voltage and increase the contact resistance of the source-leakage, which is detrimental to the performance increase. When the active layer thickness is less than 40 nm devices started to lower, active layer on surface States of organic material on the surface of the gap State density increases so as to have an adverse effect on channel carrier mobility, as well as the threshold voltage of the device increases, low thickness of the device itself also as the semiconductor thin films of semiconductor layers of ups and downs and result in performance degradation. |
2楼2012-06-12 17:02:56
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爱与雨下: 金币+3 2012-06-12 19:14:17
爱与雨下: 金币+3 2012-06-12 19:14:17
| Carrier mobility is affected by organic semiconductor structure, and arrange, reference 5 also has a related discussion on this. AB after solution treatment, surface morphology changes of SiO2, reducing the energy state of the surface. Using an atomic force microscope (AFM) observing the surface of insulating thin film layer. Figure 7 is after cleaning the surface of SiO2 layer. Figure 8 is SiO2 layer surface topography map of AB solution. Generally, transistor device insulation layer of surface roughness is measured in device performance, carrier mobility a key indicator of the size. Smooth surface of the insulation, flatness, surface defects in the insulator (such as pinholes, and trap) less easy to carriers by; on the contrary, carrier will be captured by the surface defects in the insulator, thereby reducing the mobility of the device. AB solution changes the insulating layer of surface evaporation growth properties of copper phthalocyanine films, you can make the silica surface becomes more hydrophobic State, reducing the surface free energy, thus more conducive to adsorption of c film on the substrate. By source leakage between AU electrode and SiO2 AB to introduce organic and low-dielectric thin film, played in vacuum vapor barrier of gold atoms in the gold-plated thin film process to the SiO2 Silicon diffusion effect, thereby improving the insulating properties. After AB solution for insulating layer to provide a smoother surface, reduced defects at the interface level, so as to optimize the growth of thin films, c arranged molecules more orderly at the interface, thereby improving the effects migration |
3楼2012-06-12 17:03:56
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