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【答案】应助回帖
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爱与雨下: 金币+2 2012-06-12 19:14:08
livesun: 金币+200, 翻译EPI+1, 40 2012-06-13 09:23:54
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Comparison of silicon thin film thickness of 10, 40, 80 nm 3 kinds of device performance can be seen, when 40 nm is the thickness of the Silicon, the device has the highest saturation current of the charge carrier mobility, maximum absolute value and minimum threshold voltage. For the transistors of the same structure, thickness of insulation is intact, by the thickness of the regional grid bias voltage induction typically between a few molecular layers. Intrinsic carrier concentration is relatively low and drain area, is the main factor limiting transistors increase carrier mobility. When the thickness is greater than 40nm, active layer thickness increase not only to part of the gate voltage and increase the contact resistance of the source-leakage, which is detrimental to the performance increase. When the active layer thickness is less than 40 nm devices started to lower, active layer on surface States of organic material on the surface of the gap State density increases so as to have an adverse effect on channel carrier mobility, as well as the threshold voltage of the device increases, low thickness of the device itself also as the semiconductor thin films of semiconductor layers of ups and downs and result in performance degradation. |
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