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wshk1980木虫 (著名写手)
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纳米材料研究动态系列报道专栏
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希望大家多多分享好资料，了解纳米材料最新进展！！！ 如有支持者将资料发到此主题，谢谢！！！！ 希望大家多多支持！！！！ 我先抛砖引玉！！！！ 美化学家发现金纳米棒自发地将自己组装成一种环状超结构 Science Daily — Rice University chemists have discovered that tiny building blocks known as gold nanorods spontaneously assemble themselves into ring-like superstructures. 链接：http://www.SciEI.com/news/science/Chemistry/Index.html This finding, which will be published the chemistry journal Angewandte Chemie, could potentially lead to the development of novel nanodevices like highly sensitive optical sensors, superlenses, and even invisible objects for use in the military. “Finding new ways to assemble nano-objects into superstructures is an important task because at the nanoscale, the properties of those objects depend on the arrangement of individual building blocks,” said principal investigator Eugene Zubarev, the Norman Hackerman-Welch Young Investigator and assistant professor of chemistry at Rice. Although ring-like assemblies have been observed in spherical nanoparticles and other symmetrical molecules, until now such structures had not been documented with rod-shaped nanostructures. Like many nanoscale objects, gold nanorods are several billionths of a meter, or 1,000 times smaller than a human hair. Zubarev used hybrid nanorods for this research because attached to their surface are thousands of polymer molecules, which are flexible chainlike structures. The central core of the nanorods is an inorganic crystal, but the polymers attached to the outside are organic species. The combination of the inorganic and organic features resulted in a hybrid structure that proved to be critical to the study. 英文全文：http://www.sciencedaily.com/releases/2007/03/070310145606.htm [ Last edited by popsheng on 2007-4-28 at 18:12 ] |
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zhaokelun1975
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Placing single nanowires: NIST makes the connection Schematic of NIST single nanowire manipulation system. Credit: NISTResearchers at the National Institute of Standards and Technology have devised a system for manipulating and precisely positioning individual nanowires on semiconductor wafers. Their technique, described in a recent paper, allows them to fabricate sophisticated test structures to explore the properties of nanowires, using only optical microscopy and conventional photolithographic processing in lieu of advanced (and expensive) tools such as focused ion or electron beams. Nanowires and nanotubes are being studied intensively as essential elements for future nanoscale electronics, but some fundamentals remain to be worked out—among them, how to put wires only a handful of atoms in diameter where you want them. The smallest-diameter nanowires today are built in a “bottom-up” fashion, assembled atom-by-atom through a chemical growth process such as chemical vapor deposition.  Scanning electron microscope image shows a single silicon nanowire positioned in an etched trench using NIST's nanowire manipulation technique. The trench helps keep the nanowire in position during the fabrication of the rest of the test structure, which measures metal/nanowire contact resistance. The scale bar is 20 micrometers long. Credit: NISTThis is essentially a bulk process; it produces haystacks of jumbled nanowires of varying lengths and diameters. “The normal research approach,” explains NIST electronics engineer Curt Richter, “is to throw a whole bunch of these down on the test surface, hunt around with a microscope until you find a good-looking wire in about the right place, and use lithography to attach electrical contacts to it.” To achieve better control, the NIST engineers modified a standard probe station used to test individual components in microelectronic circuits. The station includes a high-resolution optical microscope and a system for precisely positioning work surfaces under a pair of customized titanium probes with tips less than 100 nanometers in diameter. In a two-step process, silicon nanowires suspended in a drop of water are deposited on a special staging wafer patterned with a grid of tiny posts, and dried. Resting on the tops of the posts, selected nanowires can be picked up by the two probe tips, which they cling to by static electricity. The test structure wafer is positioned under the probes, the nanowire is oriented by moving either the probe tips or the wafer, and then placed on the wafer in the desired position. Although not at all suited to mass production, the technique’s fine level of control allows NIST engineers to place single nanowires wherever they want to create elaborate structures for testing nanowire properties. They’ve demonstrated this by building a multiple-electrical-contact test structure for measuring the resistance of a nanowire independent of contact resistance, and a simple electromechanical “switch” suitable for measuring the flexibility of nanowires. They’ve used the technique successfully with nanowires greater than about 60 nm in diameter, and say sharper probe tips and high-resolution microscopes could push the limit lower. Citation: Q. Li, S. Koo, C.A. Richter, M.D. Edelstein, J.E. Bonevich, J.J. Kopanski, J.S. Suehle and E.M. Vogel. Precise alignment of single nanowires and fabrication of nanoelectromechanical switch and other test structures. IEEE Transactions on Nanotechnology. V.6, No.2. March 2007. Source: National Institute of Standards and Technology |
9楼2007-04-28 17:45:41
wshk1980
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Aberration-Corrected Imaging of Active Sites on Industrial Catalyst Nanoparticle Lionel Cervera Gontard, Lan-Yun Chang, Crispin J. D. Hetherington, Angus I. Kirkland, Dogan Ozkaya, and Rafal E. Dunin-Borkowski Angew. Chem. Int. Ed. 2007, 46, 1 – 4 http://www3.interscience.wiley.c ... /114199478/PDFSTART |
2楼2007-03-24 14:00:24
wshk1980
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3楼2007-03-29 16:27:40
zhaokelun1975
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IBM将摩尔定律推进到三维时代 赛迪网2007年4月27日讯 日前，IBM宣布在制造环境中实现了一种突破性的芯片堆叠技术，此举为制造三维芯片扫清了障碍，摩尔定律也将因此而突破原来预期的极限。这种被称为“穿透硅通道（through-silicon vias）”的技术可以大大缩小不同芯片组件之间的距离，从而设计出速度更快、体积更小和能耗更低的系统。 IBM的这项突破实现了从二维芯片设计到三维芯片堆叠的转变，将传统上并排安装在硅圆片上的芯片和内存设备以堆叠的方式相互叠加在一起，最终实现了一种紧凑的组件层状结构，大大减小了芯片的体积，并提高了数据在芯片上各个功能区之间的传输速度。 IBM半导体研发中心副总裁Lisa Su表示：“这一突破性的进展是IBM开展十多年探索研究的成果。我们可以将三维芯片从实验室走向制造生产环节，来支持各种各样的应用。” 这种IBM新方法是依靠新的穿透硅通道技术而非长金属电线来连接目前的二维芯片，这实际上是在硅圆片上蚀刻出来的垂直连接通道，并在其中注满金属。这些通道可以使多个芯片堆叠在一起，同时支持芯片之间更大信息量的传输。 这项工艺将信息在芯片上传输的距离缩短了1000倍，与二维芯片相比可以增加最多100倍的信息通道或路径。 IBM已经在自己的生产线上运行使用这种穿透硅通道技术的芯片，并将在2007年下半年开始为客户提供使用这种方法制造的芯片样本，同时在2008年投入生产。这种穿透硅通道技术最早将被用于无线通信芯片领域，这些芯片将被安装在无线LAN和蜂窝应用所使用的功率放大器之中。另外，三维技术也将应用于更广泛的芯片应用领域，包括目前那些运行在IBM高性能服务器和超级计算机中的芯片，这些服务器和超级计算机支持着全球的商业活动、政府和科学研究工作。 |
5楼2007-04-28 17:06:23
