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ceramic

木虫 (小有名气)

[交流] 欢迎大家投稿新创刊的Journal of Advanced Dielectrics 【很快就Sci检索啦】

做功能电介质的虫虫们，西交大姚熹院士创办了一份英文期刊，Journal of Advanced Dielectrics，新加坡出版，副主编都是大牛。

Aims & Scope
The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics:

    Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches).
    Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal).
    Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect).
    Ferroelectric materials and devices (single crystals and ceramics).
    Thin/thick films and devices (ferroelectric memory devices, capacitors).
    Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics).
    Pyroelectric materials and devices
    Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials).
    Electrooptic and photonic materials.
    Energy harvesting and storage materials (polymer, composite, super-capacitor).
    Phase transitions and structural characterizations.
    Microwave and milimeterwave dielectrics.
    Nanostructure, size effects and characterizations.
    Engineering dielectrics for high voltage applications (insulation, electrical breakdown).
    Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).

JAD is sponsored by the International Center for Dielectric Research (ICDR), Xi'an Jiaotong University, China.

Discover and keep up-to-date with the latest research on Advanced Dielectrics with free electronic subscription of Journal of Advanced Dielectrics (JAD) for 2011.  Sign up here and gain Free Access to the full text articles for 2011!

Editor-in-Chief
Xi Yao
Electronic Materials Research Laboratory (EMRL)
Xi'an Jiaotong University, Xi'an 710049, P.R. China
xyao@mail.xjtu.edu.cn
Tel: +86-29-82668908
Fax: +86-29-82668794
Editors
Alexander K. Tagantsev
Ceramics Laboratory, Materials Science and Engineering
Swiss Federal Institutes of Technology (EPFL)
IMX STI Station 12 EPFL
Lausanne 1015, Switzerland
alexander.tagantsev@epfl.ch

Zuo-Guang Ye
Department of Chemistry
Simon Fraser University, Burnaby, B.C., V5A 1S6, Canada
zye@sfu.ca

Satoshi Wada
Department of Applied Chemistry
University of Yamanashi
4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan
swada@yamanashi.ac.jp

Weiguang Zhu
Division of Microelectronics, School of Electrical & Electronic Engineering
Nanyang Technological University, Singapore 639798, Singapore
ewzhu@ntu.edu.sg

Board Members
Marin Alexe
Max Planck Institute of Microstructure Physics
Weinberg 2, 06120 Halle (Saale), Germany
malexe@mpi-halle.mpg.de

Miguel Algueró
Instituto de Ciencia de Materiales de Madrid (ICMM)
Consejo Superior de Investigaciones Científicas (CSIC)
Cantoblanco, Madrid 28049, Spain
malguero@icmm.csic.es

Amar Bhalla
Department of Electrical and Computer Engineering
University of Texas at San Antonio
San Antonio, TX 78249, USA
amar.bhalla@utsa.edu

Alexei A. Bokov
Simon Fraser University
Burnaby, BC, V5A 1S6, CANADA
abokov@sfu.ca

David Cann
School of Mechanical, Industrial, and Mechanical Engineering
Oregon State University, Corvallis, OR 97331, USA
cann@engr.orst.edu

Yanfeng Chen
Department of Materials Science and Engineering
National Laboratory of Solid-State Microstructures
Nanjing University, Nanjing 210093, P.R. China
yfchen@nju.edu.cn

Zhongyang Cheng
Materials Engineering
275 Wilmore Lab, Auburn University, AL 36849, USA
chengzh@eng.auburn.edu

Dragan Damjanovic
Ceramics Laboratory, Institute of Materials, School of Engineering, EPFL
EPFL-STI-IMX-LC, Station 12, CH-1015 Lausanne, Switzerland
dragan.damjanovic@epfl.ch

José Antonio Eiras
Grupo de Cerâmicas Ferroelétricas
Universidade Federal de São Carlos
Rod. Washington Luis, km 235, São Carlos - SP - Brasil
eiras@df.ufscar.br

Catherine Elissalde
Institute of Condensed Matter Chemistry of Bordeaux (ICMCB) - CNRS,
87 Avenue du Docteur A. Schweitzer, 33608 Pessac cedex, France
elissald@icmcb-bordeaux.cnrs.fr

Chunlin Jia
Institut für Festkörperforschung
Forschungszentrum Jülich
52425 Jülich, Germany
c.jia@fz-juelich.de

Andrei Kholkin
DECV & CICECO, University of Aveiro
3810-193 Aveiro, Portugal
kholkin@ua.pt

Eung Soo Kim
Department of Materials Engineering
Kyonggi University
Suwon 443-760, Korea
eskim@kyonggi.ac.kr

Yan-Rong Li
School of Microelectronics and Solid-State Electronics
University of Electronics Science and Technology of China
No.4, Section 2, North Jianshe Road, Chengdu 610054, P.R. China
yrli@uestc.edu.cn

Yongxiang Li
Shanghai Institute of Ceramics, Chinese Academy of Sciences
1295 Dingxi Road, Shanghai 200050, P.R. China
yxli@mail.sic.ac.cn

Yun Liu
Research School of Chemistry
The Australian National University, ACT 0200, Australia
yliu@rsc.anu.edu.au

Hanxing Liu
School of Materials Science and Engineering
Wuhan University of Technology
122 Luoshi Road, Wuhan 430070, P.R. China
lhxhp@whut.edu.cn

Cewen Nan
Department of Material Science and Engineering
Tsinghua University, Beijing 100084, P.R. China
cwnan@mail.tsinghua.edu.cn

Shashank Priya
Mechanical Engineering
Virginia Tech
310 Durham Hall, Blacksburg, VA 24061, USA
spriya@vt.edu

Yimnirun Rattikorn
School of Physics, Institute of Science
Suranaree University of Technology
Nakhon Ratchasima 30000, Thailand
rattikorn@sut.ac.th

Mike Reece
Eng 336, Department of Materials
Queen Mary, University of London
London E1 4NS, UK
m.j.reece@qmul.ac.uk

Wei Ren
Electronic Materials Research Laboratory (EMRL)
Xi'an Jiaotong University, Xi'an 710049, P.R. China
wren@mail.xjtu.edu.cn

Vladimir Ya. Shur
Ferroelectric Laboratory, Institute of Physics & Applied Mathematics
Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russia
Vladimir.shur@usu.ru

R. P. Tandon
Department of Physics and Astrophysics
University of Delhi,
Delhi-110007, India
ram_tandon@hotmail.com

Tseung-Yuen Tseng
Department of Electronics Engineering & Institute of Electronics
National Chiao-Tung University
1001 Ta Hsueh Road, Hsinchu 300, Taiwan
tseng@cc.nctu.edu.tw

Takaaki Tsurumi
Graduate School of Science and Engineering,
Tokyo Institute of Technology,
2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
ttsurumi@ceram.titech.ac.jp

Chunlei Wang
School of Physics, Shandong University
27 South Shanda Road, Jinan 250100, P.R. China
wangcl@sdu.edu.cn

Yugong Wu
School of Electronic and Information Engineering
Tianjin University, 92 Weijing Road, Tianjin 300072, P.R. China
wuyugong@tju.edu.cn

Kai Wu
State Key Lab. of Power Equipment and Electrical Insulation
Xi'an Jiaotong University, Xi'an 710049, P. R. China
wukai@mail.xjtu.edu.cn

Jiwei Zhai
Functional Materials Research Laboratory (FMRL)
Tongji University, 1239 Siping Road, Shanghai 200092, P.R. China
apzhai@mail.tongji.edu.cn

Jianguo Zhu
College of Materials Science and Engineering
Sichuan University, Wangjiang Road 29, Chengdu 610064, P.R. China
nic0400@scu.edu.cn

目前第一卷四期都已出版，第二卷已经完成了两期的稿件。到第三卷就可以sci检索了。大家想投稿的，赶快了。等sci检索了，稿件量就要剧增了，要投稿的赶紧，呵呵

主页：http://www.worldscinet.com/jad

最新文章列表
http://www.worldscinet.com/jad/01/0104/S2010135X110104.html

欢迎来信咨询
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2011-12-29 05:34:44
上传一些该杂志发表的文章

Volume: 1, Issue: 1(2011) p. v
Abstract | Full Text (PDF, 32KB)
Title:         EDITORIAL NOTE
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  • 附件 1 : J.Adv.Dielec. 2011 V.pdf
    • 2011-12-29 05:29:20, 32.24 K
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2011-12-29 05:34:49
Volume: 1, Issue: 1(2011) pp. 1-16     DOI: 10.1142/S2010135X11000021
Abstract | Full Text (PDF, 2,276KB) | References
Title:         MAGNETOELECTRIC RESPONSES IN MULTIFERROIC COMPOSITE THIN FILMS

Author(s):        
JIA-MIAN HU
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
JING MA
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
JING WANG
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
ZHENG LI
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
YUAN-HUA LIN
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
C. W. NAN
Corresponding author.
Department of Materials Science and Engineering and State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, P. R. China
History:        

Received 20 September 2010

Abstract:        
Multiferroic composite thin films of ferroelectrics and magnets have attracted ever-increasing interest in most recent years. In this review, magnetoelectric (ME) responses as well as their underlying ME coupling mechanisms in such multiferroic composite thin films are discussed, oriented by their potential applications in novel ME devices. Among them, the direct ME response, i.e., magnetic-field control of polarization, can be exploited for micro-sensor applications (sensing magnetic field, electric current, light, etc.), mainly determined by a strain-mediated coupling interaction. The converse ME response, i.e., electric-field modulation of magnetism, offers great opportunities for new potential devices for spintronics and in data storage applications. A series of prototype ME devices based on both direct and converse ME responses have been presented. The review concludes with a remark on the future possibilities and scientific challenges in this field.

Keywords:        
Multiferroic; magnetoelectric effect; composite thin film; magnetoelectric devices; memory devices[ Last edited by ceramic on 2011-12-29 at 05:32 ]
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  • 附件 1 : J.Adv.Dielec. 2011 1.pdf
    • 2011-12-29 05:32:11, 2.22 M
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2011-12-29 05:34:52
Volume: 1, Issue: 1(2011) pp. 17-31     DOI: 10.1142/S2010135X11000033
Abstract | Full Text (PDF, 1,495KB) | References
Title:         LOSS DETERMINATION METHODOLOGY FOR A PIEZOELECTRIC CERAMIC: NEW PHENOMENOLOGICAL THEORY AND EXPERIMENTAL PROPOSALS

Author(s):        
KENJI UCHINO
Corresponding author.
Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
Office of Naval Research Global – Asia, Minato-ku, Tokyo 106-0032, Japan
YUAN ZHUANG
Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
SEYIT O. URAL
Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA

History:        
Received 2 December 2010

Abstract:        
The key factor to the miniaturization of piezoelectric devices is power density, which is limited by the heat generation or loss mechanisms. There are three loss components in general in piezoelectric vibrators/resonators, i.e., dielectric, elastic and piezoelectric losses. The mechanical quality factor, determined by these three factors, is the Figure Of Merit (FOM) in the sense of loss or heat generation. In this paper, we introduce a new loss phenomenology and innovative measuring methods based on the theory. First, quality factors at resonance and antiresonance for the k31, k33, kt and k15 vibration modes are derived theoretically, and the methodology for determining loss factors in various orientations (i.e., loss anisotropy) is provided. For simplicity, we focus on materials with ∞ mm (equivalent to 6 mm) crystal symmetry for deriving the loss factors of a polycrystalline ceramic, and 14 different loss factors among 20 in total can be obtained from the measurements. Second, we propose the experimental methods for measuring both mechanical quality factors QA and QB at the resonance and antiresonance modes: a continuous admittance/impedance spectrum measuring method (traditional with temperature rise) and a burst mode (to circumvent the temperature effect).

Keywords:        
Piezoelectric; loss factor; quality factor; high power; piezoelectric loss; dielectric loss; elastic loss; admittance/impedance spectrum; burst mode
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  • 附件 1 : J.Adv.Dielec. 2011 17.pdf
    • 2011-12-29 05:33:52, 1.46 M
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2012-06-07 15:08:11
Volume: 2, Issue: 1(2012) 1230001 (18 pages)     DOI: 10.1142/S2010135X12300010
Abstract | Full Text (PDF, 2,367KB) | References
Title:         REVIEW ON PIEZOELECTRIC, ULTRASONIC, AND MAGNETOELECTRIC ACTUATORS
Author(s):        
SHUXIANG DONG

Abstract:        
Piezoelectric actuators operating in piezoelectric-induced strain/stress or electromechanical resonance-induced vibration or wave-motion friction drive mechanism have shown many advantages over traditional electromagnetic motors, especially, when miniaturizing into millimeter-scale size, while magnetoelectric actuators operating in magnetostrictive mechanism are capable of piezoelectric self-sensing and remote operation under an applied magnetic field. This paper summarizes the recent progresses in piezoelectric ceramic and single crystal materials based actuators and micromotors, ferromagnetic/ferroelectric laminated magnetoelectric actuators, including rotary, linear, planner, and spherical motion actuators, and bending motion magnetoelectric actuators. Their driving mechanisms, operation properties, and applications are also explained.
Keywords:        
Piezoelectric; ultrasonic; magnetoelectric; actuator; micromotor


[ Last edited by ceramic on 2012-6-7 at 15:20 ]
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  • 附件 1 : 1. REVIEW ON PIEZOELECTRIC, ULTRASONIC, AND MAGNETOELECTRIC ACTUATORS.pdf
    • 2012-06-07 15:08:01, 2.31 M
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2012-06-07 15:10:40
Volume: 2, Issue: 1(2012) 1230002 (15 pages)     DOI: 10.1142/S2010135X12300022
Abstract | Full Text (PDF, 1,744KB) | References
Title:         RELAXOR FERROELECTRIC MATERIALS FOR MICROWAVE TUNABLE APPLICATIONS
Author(s):        
QIWEI ZHANG, JIWEI ZHAI, LING BING KONG

Abstract:        
With strong dependences of dielectric constant on external applied electric fields, relaxor barium zirconium titanate (BaZrxTi1-xO3 or BZT) and barium stannate titanate (BaSnxTi1-xO3 or BTS), in both bulk ceramic and thin film forms, are increasingly being recognized as potential candidates of microwave tunable materials for device applications. This paper is aimed to review the recent progress in understanding the dielectric properties (such as tunability, dielectric loss and dielectric constant) of these relaxor materials. However, due to their relatively high dielectric constant and loss tangent, pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 do not fully satisfy the requirements of practical device applications. Therefore, various strategies have been developed to improve the dielectric properties of these two groups of relaxor materials. In this paper, we first discussed the dielectric tunability characteristics of pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 and then summarized the strategies that have been used, including (i) small amount acceptor or donor doping (such as rare-earth ions and transition metal ions) and (ii) forming composites with low loss and low dielectric constant microwave dielectric materials (such as MgO, MgTiO3 and so on). At the same time, the relationship between relaxor behavior and dielectric tunability was also discussed.

Keywords:        
Relaxor materials; barium zirconium titanate; barium stannate titanate; dielectric tunability; ferroelectric composites




[ Last edited by ceramic on 2012-6-7 at 15:19 ]
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    • 2012-06-07 15:10:22, 1.7 M
120楼2012-06-07 15:10:30
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2012-06-07 15:22:08
Volume: 2, Issue: 1(2012) 1250001 (14 pages)     DOI: 10.1142/S2010135X12500014
Abstract | Full Text (PDF, 2,621KB) | References
Title:         SYNTHESIS, CHARACTERIZATION AND ELECTRICAL PROPERTIES OF Nd/Zr CO-DOPED NANO BaTiO3 CERAMICS
Author(s):        
CH. SAMEERA DEVI, M. B. SURESH, G. S. KUMAR, G. PRASAD

Abstract:        
Ceramic samples of composition Ba1-3xNd2xTi1-yZryO3 (x = 0.025;y = 0,0.025 and 0.05) were synthesized by modified sol–gel technique. Phase confirmation, surface morphology and electrical properties of the samples were studied using XRD, FESEM, impedance spectroscopy and DC conductivity. Impedance, AC and DC conductivities of the samples were recorded in the temperature range room temperature (RT) –500°C. From impedance data, various parameters like bulk resistance (Rb), bulk capacitance (Cb), grain resistance (Rg), grain boundary resistance (Rgb), grain capacitance (Cg) and grain boundary capacitance (Cgb) were determined. These parameters were found to be function of both temperature and frequency. Grain and grain boundary relaxation times (τg,τgb) were also evaluated as a function of temperature. From AC and DC conductivity plots activation energies for conduction were obtained. Results obtained lead to improved understanding of conductivity and charge transportation kinetics in the present system of samples.

Keywords:        
Sol–gel method; BaTiO3; impedance spectroscopy; DC conductivity; AC conductivity

[ Last edited by ceramic on 2012-6-7 at 15:21 ]
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121楼2012-06-07 15:14:49
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ceramic

木虫 (小有名气)
ceramic: 回帖置顶 2012-06-07 15:24:04
Volume: 2, Issue: 1(2012) 1250002 (11 pages)     DOI: 10.1142/S2010135X12500026
Abstract | Full Text (PDF, 791KB) | References
Title:         IMPEDANCE AND MODULUS SPECTROSCOPY CHARACTERIZATION OF SODIUM-BISMUTH TITANATE-BASED LEAD-FREE FERROELECTRIC MATERIALS

Author(s):        
DHANANJAY K. SHARMA, RAJU KUMAR, RADHESHYAM RAI

Abstract:        
In this paper, we present impedance spectroscopy of Sodium Bismuth Titanate-based materials belonging to (1-x)Na1/2Bi1/2TiO3-xBaTiO3 (x = 0.04) (NBT–BT) system. NBT–BT ceramics are prepared by high temperature solid-state reaction method. X-ray diffraction technique showed single-phase polycrystalline sample with an ABO3 perovskite structure. Dielectric behavior and the impedance relaxation were investigated in a wide range of temperature (room temperature (RT) –500°C) and frequency (1 kHz–1 MHz). A broad dielectric constant peak was observed over a wide temperature range around the phase transition temperature. The complex impedance plot exhibited one impedance semicircle identified over the frequency range of 1 kHz–1 MHz, which is explained by the grain effect of the bulk. The centers of the impedance semicircles lie below the real axis, which indicates that the impedance response is a Cole–Cole type relaxation.

Keywords:        
Ceramics; X-ray diffraction; piezoelectricity perovskite; dielectric properties
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122楼2012-06-07 15:23:53
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gswylq

木虫 (正式写手)
★
ceramic(金币+1): 谢谢参与
这个期刊不错，但是不知道如何下载文章啊。http://www.worldscientific.com/doi/abs/10.1142/S2010135X11000264
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126楼2012-09-02 09:04:49
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普通回帖

leonwoo

铁杆木虫 (正式写手)

0.8

哟，沙发哦～
是个很有潜力的journal，正符合我的专业方向，日后一定多多光顾。
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2楼2011-12-24 06:54:03
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gyq2006

木虫 (著名写手)
★
小木虫(金币+0.5):给个红包，谢谢回帖
是个很有潜力的journal，正符合我的专业方向
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3楼2011-12-24 09:54:38
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ceramic

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欢迎大家踊跃投稿，支持Journal of Advanced Dielectrics的发展。
从已经发表的jad文章上来看，该杂志的审稿和发表周期还是短的。
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4楼2011-12-24 17:41:39
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smyli

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顶一个
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6楼2011-12-24 19:51:39
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sctzc

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7楼2011-12-24 20:08:33
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sctzc

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8楼2011-12-24 20:09:06
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haobin

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弱弱的问，如果现在被该刊接受了，以后该刊被SCI检索后，影响因子如何算，是不是现在还没有影响因子
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ceramic
9楼2011-12-25 11:03:40
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ufor2006

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我看好该刊哦~~
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10楼2011-12-25 11:43:46
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liuyan1078

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祝福！好运！加油！
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12楼2011-12-25 11:56:28
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ceramic

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引用回帖:
楼: Originally posted by haobin at 2011-12-25 11:03:40:
弱弱的问，如果现在被该刊接受了，以后该刊被SCI检索后，影响因子如何算，是不是现在还没有影响因子

影响因子是用该期刊前两年的总引用次数除以前两年发表的文章数。
因此是现有前两年发表的文章被检索，然后才能计算影响因子。

该杂志为新加坡World Scientific Publishing集团出版。他们出版的科学期刊现在都进入web of science （SCI）数据库检索。

现在第二年出版计划已经完成了两期。还有两期就到第三年了。
因此从2013年起该杂志就会有影响因子。保守估计在2.0以上。
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24楼2011-12-25 17:30:01
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swqowen

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飘过！
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26楼2011-12-25 18:26:47
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haixing2008

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圣诞快乐！元旦快乐！
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33楼2011-12-25 18:55:41
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armul

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祝贺~~
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35楼2011-12-25 18:59:04
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