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[½»Á÷] »¶Ó­´ó¼ÒͶ¸åд´¿¯µÄJournal of Advanced Dielectrics ¡¾ºÜ¿ì¾ÍSci¼ìË÷À²¡¿

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Aims & Scope
The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics:

    Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches).
    Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal).
    Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect).
    Ferroelectric materials and devices (single crystals and ceramics).
    Thin/thick films and devices (ferroelectric memory devices, capacitors).
    Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics).
    Pyroelectric materials and devices
    Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials).
    Electrooptic and photonic materials.
    Energy harvesting and storage materials (polymer, composite, super-capacitor).
    Phase transitions and structural characterizations.
    Microwave and milimeterwave dielectrics.
    Nanostructure, size effects and characterizations.
    Engineering dielectrics for high voltage applications (insulation, electrical breakdown).
    Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics).

JAD is sponsored by the International Center for Dielectric Research (ICDR), Xi'an Jiaotong University, China.

Discover and keep up-to-date with the latest research on Advanced Dielectrics with free electronic subscription of Journal of Advanced Dielectrics (JAD) for 2011.  Sign up here and gain Free Access to the full text articles for 2011!

Editor-in-Chief
Xi Yao
Electronic Materials Research Laboratory (EMRL)
Xi'an Jiaotong University, Xi'an 710049, P.R. China
xyao@mail.xjtu.edu.cn
Tel: +86-29-82668908
Fax: +86-29-82668794
Editors
Alexander K. Tagantsev
Ceramics Laboratory, Materials Science and Engineering
Swiss Federal Institutes of Technology (EPFL)
IMX STI Station 12 EPFL
Lausanne 1015, Switzerland
alexander.tagantsev@epfl.ch

Zuo-Guang Ye
Department of Chemistry
Simon Fraser University, Burnaby, B.C., V5A 1S6, Canada
zye@sfu.ca

Satoshi Wada
Department of Applied Chemistry
University of Yamanashi
4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan
swada@yamanashi.ac.jp

Weiguang Zhu
Division of Microelectronics, School of Electrical & Electronic Engineering
Nanyang Technological University, Singapore 639798, Singapore
ewzhu@ntu.edu.sg

Board Members
Marin Alexe
Max Planck Institute of Microstructure Physics
Weinberg 2, 06120 Halle (Saale), Germany
malexe@mpi-halle.mpg.de

Miguel Alguer¨®
Instituto de Ciencia de Materiales de Madrid (ICMM)
Consejo Superior de Investigaciones Cient¨ªficas (CSIC)
Cantoblanco, Madrid 28049, Spain
malguero@icmm.csic.es

Amar Bhalla
Department of Electrical and Computer Engineering
University of Texas at San Antonio
San Antonio, TX 78249, USA
amar.bhalla@utsa.edu

Alexei A. Bokov
Simon Fraser University
Burnaby, BC, V5A 1S6, CANADA
abokov@sfu.ca

David Cann
School of Mechanical, Industrial, and Mechanical Engineering
Oregon State University, Corvallis, OR 97331, USA
cann@engr.orst.edu

Yanfeng Chen
Department of Materials Science and Engineering
National Laboratory of Solid-State Microstructures
Nanjing University, Nanjing 210093, P.R. China
yfchen@nju.edu.cn

Zhongyang Cheng
Materials Engineering
275 Wilmore Lab, Auburn University, AL 36849, USA
chengzh@eng.auburn.edu

Dragan Damjanovic
Ceramics Laboratory, Institute of Materials, School of Engineering, EPFL
EPFL-STI-IMX-LC, Station 12, CH-1015 Lausanne, Switzerland
dragan.damjanovic@epfl.ch

Jos¨¦ Antonio Eiras
Grupo de Cerâmicas Ferroel¨¦tricas
Universidade Federal de São Carlos
Rod. Washington Luis, km 235, São Carlos - SP - Brasil
eiras@df.ufscar.br

Catherine Elissalde
Institute of Condensed Matter Chemistry of Bordeaux (ICMCB) - CNRS,
87 Avenue du Docteur A. Schweitzer, 33608 Pessac cedex, France
elissald@icmcb-bordeaux.cnrs.fr

Chunlin Jia
Institut f¨¹r Festkörperforschung
Forschungszentrum J¨¹lich
52425 J¨¹lich, Germany
c.jia@fz-juelich.de

Andrei Kholkin
DECV & CICECO, University of Aveiro
3810-193 Aveiro, Portugal
kholkin@ua.pt

Eung Soo Kim
Department of Materials Engineering
Kyonggi University
Suwon 443-760, Korea
eskim@kyonggi.ac.kr

Yan-Rong Li
School of Microelectronics and Solid-State Electronics
University of Electronics Science and Technology of China
No.4, Section 2, North Jianshe Road, Chengdu 610054, P.R. China
yrli@uestc.edu.cn

Yongxiang Li
Shanghai Institute of Ceramics, Chinese Academy of Sciences
1295 Dingxi Road, Shanghai 200050, P.R. China
yxli@mail.sic.ac.cn

Yun Liu
Research School of Chemistry
The Australian National University, ACT 0200, Australia
yliu@rsc.anu.edu.au

Hanxing Liu
School of Materials Science and Engineering
Wuhan University of Technology
122 Luoshi Road, Wuhan 430070, P.R. China
lhxhp@whut.edu.cn

Cewen Nan
Department of Material Science and Engineering
Tsinghua University, Beijing 100084, P.R. China
cwnan@mail.tsinghua.edu.cn

Shashank Priya
Mechanical Engineering
Virginia Tech
310 Durham Hall, Blacksburg, VA 24061, USA
spriya@vt.edu

Yimnirun Rattikorn
School of Physics, Institute of Science
Suranaree University of Technology
Nakhon Ratchasima 30000, Thailand
rattikorn@sut.ac.th

Mike Reece
Eng 336, Department of Materials
Queen Mary, University of London
London E1 4NS, UK
m.j.reece@qmul.ac.uk

Wei Ren
Electronic Materials Research Laboratory (EMRL)
Xi'an Jiaotong University, Xi'an 710049, P.R. China
wren@mail.xjtu.edu.cn

Vladimir Ya. Shur
Ferroelectric Laboratory, Institute of Physics & Applied Mathematics
Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russia
Vladimir.shur@usu.ru

R. P. Tandon
Department of Physics and Astrophysics
University of Delhi,
Delhi-110007, India
ram_tandon@hotmail.com

Tseung-Yuen Tseng
Department of Electronics Engineering & Institute of Electronics
National Chiao-Tung University
1001 Ta Hsueh Road, Hsinchu 300, Taiwan
tseng@cc.nctu.edu.tw

Takaaki Tsurumi
Graduate School of Science and Engineering,
Tokyo Institute of Technology,
2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
ttsurumi@ceram.titech.ac.jp

Chunlei Wang
School of Physics, Shandong University
27 South Shanda Road, Jinan 250100, P.R. China
wangcl@sdu.edu.cn

Yugong Wu
School of Electronic and Information Engineering
Tianjin University, 92 Weijing Road, Tianjin 300072, P.R. China
wuyugong@tju.edu.cn

Kai Wu
State Key Lab. of Power Equipment and Electrical Insulation
Xi'an Jiaotong University, Xi'an 710049, P. R. China
wukai@mail.xjtu.edu.cn

Jiwei Zhai
Functional Materials Research Laboratory (FMRL)
Tongji University, 1239 Siping Road, Shanghai 200092, P.R. China
apzhai@mail.tongji.edu.cn

Jianguo Zhu
College of Materials Science and Engineering
Sichuan University, Wangjiang Road 29, Chengdu 610064, P.R. China
nic0400@scu.edu.cn

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Volume: 1, Issue: 1(2011) pp. 17-31     DOI: 10.1142/S2010135X11000033
Abstract | Full Text (PDF, 1,495KB) | References
Title:         LOSS DETERMINATION METHODOLOGY FOR A PIEZOELECTRIC CERAMIC: NEW PHENOMENOLOGICAL THEORY AND EXPERIMENTAL PROPOSALS

Author(s):        
KENJI UCHINO
Corresponding author.
Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
Office of Naval Research Global ¨C Asia, Minato-ku, Tokyo 106-0032, Japan
YUAN ZHUANG
Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA
SEYIT O. URAL
Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA

History:        
Received 2 December 2010

Abstract:        
The key factor to the miniaturization of piezoelectric devices is power density, which is limited by the heat generation or loss mechanisms. There are three loss components in general in piezoelectric vibrators/resonators, i.e., dielectric, elastic and piezoelectric losses. The mechanical quality factor, determined by these three factors, is the Figure Of Merit (FOM) in the sense of loss or heat generation. In this paper, we introduce a new loss phenomenology and innovative measuring methods based on the theory. First, quality factors at resonance and antiresonance for the k31, k33, kt and k15 vibration modes are derived theoretically, and the methodology for determining loss factors in various orientations (i.e., loss anisotropy) is provided. For simplicity, we focus on materials with ¡Þ mm (equivalent to 6 mm) crystal symmetry for deriving the loss factors of a polycrystalline ceramic, and 14 different loss factors among 20 in total can be obtained from the measurements. Second, we propose the experimental methods for measuring both mechanical quality factors QA and QB at the resonance and antiresonance modes: a continuous admittance/impedance spectrum measuring method (traditional with temperature rise) and a burst mode (to circumvent the temperature effect).

Keywords:        
Piezoelectric; loss factor; quality factor; high power; piezoelectric loss; dielectric loss; elastic loss; admittance/impedance spectrum; burst mode

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