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×ö¹¦Äܵç½éÖÊµÄ³æ³æÃÇ£¬Î÷½»´óÒ¦ìäԺʿ´´°ìÁËÒ»·ÝÓ¢ÎÄÆÚ¿¯£¬Journal of Advanced Dielectrics£¬ÐÂ¼ÓÆÂ³ö°æ£¬¸±Ö÷±à¶¼ÊÇ´óÅ£¡£ Aims & Scope The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics: Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches). Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal). Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect). Ferroelectric materials and devices (single crystals and ceramics). Thin/thick films and devices (ferroelectric memory devices, capacitors). Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics). Pyroelectric materials and devices Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials). Electrooptic and photonic materials. Energy harvesting and storage materials (polymer, composite, super-capacitor). Phase transitions and structural characterizations. Microwave and milimeterwave dielectrics. Nanostructure, size effects and characterizations. Engineering dielectrics for high voltage applications (insulation, electrical breakdown). Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics). JAD is sponsored by the International Center for Dielectric Research (ICDR), Xi'an Jiaotong University, China. Discover and keep up-to-date with the latest research on Advanced Dielectrics with free electronic subscription of Journal of Advanced Dielectrics (JAD) for 2011. Sign up here and gain Free Access to the full text articles for 2011! Editor-in-Chief Xi Yao Electronic Materials Research Laboratory (EMRL) Xi'an Jiaotong University, Xi'an 710049, P.R. China xyao@mail.xjtu.edu.cn Tel: +86-29-82668908 Fax: +86-29-82668794 Editors Alexander K. Tagantsev Ceramics Laboratory, Materials Science and Engineering Swiss Federal Institutes of Technology (EPFL) IMX STI Station 12 EPFL Lausanne 1015, Switzerland alexander.tagantsev@epfl.ch Zuo-Guang Ye Department of Chemistry Simon Fraser University, Burnaby, B.C., V5A 1S6, Canada zye@sfu.ca Satoshi Wada Department of Applied Chemistry University of Yamanashi 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan swada@yamanashi.ac.jp Weiguang Zhu Division of Microelectronics, School of Electrical & Electronic Engineering Nanyang Technological University, Singapore 639798, Singapore ewzhu@ntu.edu.sg Board Members Marin Alexe Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Saale), Germany malexe@mpi-halle.mpg.de Miguel Alguer¨® Instituto de Ciencia de Materiales de Madrid (ICMM) Consejo Superior de Investigaciones Cient¨ªficas (CSIC) Cantoblanco, Madrid 28049, Spain malguero@icmm.csic.es Amar Bhalla Department of Electrical and Computer Engineering University of Texas at San Antonio San Antonio, TX 78249, USA amar.bhalla@utsa.edu Alexei A. Bokov Simon Fraser University Burnaby, BC, V5A 1S6, CANADA abokov@sfu.ca David Cann School of Mechanical, Industrial, and Mechanical Engineering Oregon State University, Corvallis, OR 97331, USA cann@engr.orst.edu Yanfeng Chen Department of Materials Science and Engineering National Laboratory of Solid-State Microstructures Nanjing University, Nanjing 210093, P.R. China yfchen@nju.edu.cn Zhongyang Cheng Materials Engineering 275 Wilmore Lab, Auburn University, AL 36849, USA chengzh@eng.auburn.edu Dragan Damjanovic Ceramics Laboratory, Institute of Materials, School of Engineering, EPFL EPFL-STI-IMX-LC, Station 12, CH-1015 Lausanne, Switzerland dragan.damjanovic@epfl.ch Jos¨¦ Antonio Eiras Grupo de Cerâmicas Ferroel¨¦tricas Universidade Federal de São Carlos Rod. Washington Luis, km 235, São Carlos - SP - Brasil eiras@df.ufscar.br Catherine Elissalde Institute of Condensed Matter Chemistry of Bordeaux (ICMCB) - CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac cedex, France elissald@icmcb-bordeaux.cnrs.fr Chunlin Jia Institut f¨¹r Festkörperforschung Forschungszentrum J¨¹lich 52425 J¨¹lich, Germany c.jia@fz-juelich.de Andrei Kholkin DECV & CICECO, University of Aveiro 3810-193 Aveiro, Portugal kholkin@ua.pt Eung Soo Kim Department of Materials Engineering Kyonggi University Suwon 443-760, Korea eskim@kyonggi.ac.kr Yan-Rong Li School of Microelectronics and Solid-State Electronics University of Electronics Science and Technology of China No.4, Section 2, North Jianshe Road, Chengdu 610054, P.R. China yrli@uestc.edu.cn Yongxiang Li Shanghai Institute of Ceramics, Chinese Academy of Sciences 1295 Dingxi Road, Shanghai 200050, P.R. China yxli@mail.sic.ac.cn Yun Liu Research School of Chemistry The Australian National University, ACT 0200, Australia yliu@rsc.anu.edu.au Hanxing Liu School of Materials Science and Engineering Wuhan University of Technology 122 Luoshi Road, Wuhan 430070, P.R. China lhxhp@whut.edu.cn Cewen Nan Department of Material Science and Engineering Tsinghua University, Beijing 100084, P.R. China cwnan@mail.tsinghua.edu.cn Shashank Priya Mechanical Engineering Virginia Tech 310 Durham Hall, Blacksburg, VA 24061, USA spriya@vt.edu Yimnirun Rattikorn School of Physics, Institute of Science Suranaree University of Technology Nakhon Ratchasima 30000, Thailand rattikorn@sut.ac.th Mike Reece Eng 336, Department of Materials Queen Mary, University of London London E1 4NS, UK m.j.reece@qmul.ac.uk Wei Ren Electronic Materials Research Laboratory (EMRL) Xi'an Jiaotong University, Xi'an 710049, P.R. China wren@mail.xjtu.edu.cn Vladimir Ya. Shur Ferroelectric Laboratory, Institute of Physics & Applied Mathematics Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russia Vladimir.shur@usu.ru R. P. Tandon Department of Physics and Astrophysics University of Delhi, Delhi-110007, India ram_tandon@hotmail.com Tseung-Yuen Tseng Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University 1001 Ta Hsueh Road, Hsinchu 300, Taiwan tseng@cc.nctu.edu.tw Takaaki Tsurumi Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan ttsurumi@ceram.titech.ac.jp Chunlei Wang School of Physics, Shandong University 27 South Shanda Road, Jinan 250100, P.R. China wangcl@sdu.edu.cn Yugong Wu School of Electronic and Information Engineering Tianjin University, 92 Weijing Road, Tianjin 300072, P.R. China wuyugong@tju.edu.cn Kai Wu State Key Lab. of Power Equipment and Electrical Insulation Xi'an Jiaotong University, Xi'an 710049, P. R. China wukai@mail.xjtu.edu.cn Jiwei Zhai Functional Materials Research Laboratory (FMRL) Tongji University, 1239 Siping Road, Shanghai 200092, P.R. China apzhai@mail.tongji.edu.cn Jianguo Zhu College of Materials Science and Engineering Sichuan University, Wangjiang Road 29, Chengdu 610064, P.R. China nic0400@scu.edu.cn ĿǰµÚÒ»¾íËÄÆÚ¶¼Òѳö°æ£¬µÚ¶þ¾íÒѾÍê³ÉÁËÁ½ÆÚµÄ¸å¼þ¡£µ½µÚÈý¾í¾Í¿ÉÒÔsci¼ìË÷ÁË¡£´ó¼ÒÏëͶ¸åµÄ£¬¸Ï¿ìÁË¡£µÈsci¼ìË÷ÁË£¬¸å¼þÁ¿¾ÍÒª¾çÔöÁË£¬ÒªÍ¶¸åµÄ¸Ï½ô£¬ºÇºÇ ![]() ![]() Ö÷Ò³£ºhttp://www.worldscinet.com/jad ×îÐÂÎÄÕÂÁбí http://www.worldscinet.com/jad/01/0104/S2010135X110104.html »¶ÓÀ´ÐÅ×Éѯ |
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ceramic: »ØÌûÖö¥ 2011-12-29 05:34:52
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Volume: 1, Issue: 1(2011) pp. 17-31 DOI: 10.1142/S2010135X11000033 Abstract | Full Text (PDF, 1,495KB) | References Title: LOSS DETERMINATION METHODOLOGY FOR A PIEZOELECTRIC CERAMIC: NEW PHENOMENOLOGICAL THEORY AND EXPERIMENTAL PROPOSALS Author(s): KENJI UCHINO Corresponding author. Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA Office of Naval Research Global ¨C Asia, Minato-ku, Tokyo 106-0032, Japan YUAN ZHUANG Electrical Engineering Department, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA SEYIT O. URAL Materials Science and Engineering, International Center for Actuators and Transducers, The Pennsylvania State University, University Park, PA 16802, USA History: Received 2 December 2010 Abstract: The key factor to the miniaturization of piezoelectric devices is power density, which is limited by the heat generation or loss mechanisms. There are three loss components in general in piezoelectric vibrators/resonators, i.e., dielectric, elastic and piezoelectric losses. The mechanical quality factor, determined by these three factors, is the Figure Of Merit (FOM) in the sense of loss or heat generation. In this paper, we introduce a new loss phenomenology and innovative measuring methods based on the theory. First, quality factors at resonance and antiresonance for the k31, k33, kt and k15 vibration modes are derived theoretically, and the methodology for determining loss factors in various orientations (i.e., loss anisotropy) is provided. For simplicity, we focus on materials with ¡Þ mm (equivalent to 6 mm) crystal symmetry for deriving the loss factors of a polycrystalline ceramic, and 14 different loss factors among 20 in total can be obtained from the measurements. Second, we propose the experimental methods for measuring both mechanical quality factors QA and QB at the resonance and antiresonance modes: a continuous admittance/impedance spectrum measuring method (traditional with temperature rise) and a burst mode (to circumvent the temperature effect). Keywords: Piezoelectric; loss factor; quality factor; high power; piezoelectric loss; dielectric loss; elastic loss; admittance/impedance spectrum; burst mode |
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