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欢迎大家投稿新创刊的Journal of Advanced Dielectrics 【很快就Sci检索啦】
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做功能电介质的虫虫们，西交大姚熹院士创办了一份英文期刊，Journal of Advanced Dielectrics，新加坡出版，副主编都是大牛。 Aims & Scope The Journal of Advanced Dielectrics is an international peer-reviewed journal for original contributions on the understanding and applications of dielectrics in modern electronic devices and systems. The journal seeks to provide an interdisciplinary forum for the rapid communication of novel research of high quality in, but not limited to, the following topics: Fundamentals of dielectrics (ab initio or first-principles calculations, density functional theory, phenomenological approaches). Polarization and related phenomena (spontaneous polarization, domain structure, polarization reversal). Dielectric relaxation (universal relaxation law, relaxor ferroelectrics, giant permittivity, flexoelectric effect). Ferroelectric materials and devices (single crystals and ceramics). Thin/thick films and devices (ferroelectric memory devices, capacitors). Piezoelectric materials and applications (lead-based piezo-ceramics and crystals, lead-free piezoelectrics). Pyroelectric materials and devices Multiferroics (single phase multiferroics, composite ferromagnetic ferroelectric materials). Electrooptic and photonic materials. Energy harvesting and storage materials (polymer, composite, super-capacitor). Phase transitions and structural characterizations. Microwave and milimeterwave dielectrics. Nanostructure, size effects and characterizations. Engineering dielectrics for high voltage applications (insulation, electrical breakdown). Modeling (microstructure evolution and microstructure-property relationships, multiscale modeling of dielectrics). JAD is sponsored by the International Center for Dielectric Research (ICDR), Xi'an Jiaotong University, China. Discover and keep up-to-date with the latest research on Advanced Dielectrics with free electronic subscription of Journal of Advanced Dielectrics (JAD) for 2011. Sign up here and gain Free Access to the full text articles for 2011! Editor-in-Chief Xi Yao Electronic Materials Research Laboratory (EMRL) Xi'an Jiaotong University, Xi'an 710049, P.R. China xyao@mail.xjtu.edu.cn Tel: +86-29-82668908 Fax: +86-29-82668794 Editors Alexander K. Tagantsev Ceramics Laboratory, Materials Science and Engineering Swiss Federal Institutes of Technology (EPFL) IMX STI Station 12 EPFL Lausanne 1015, Switzerland alexander.tagantsev@epfl.ch Zuo-Guang Ye Department of Chemistry Simon Fraser University, Burnaby, B.C., V5A 1S6, Canada zye@sfu.ca Satoshi Wada Department of Applied Chemistry University of Yamanashi 4-4-37 Takeda, Kofu, Yamanashi 400-8510, Japan swada@yamanashi.ac.jp Weiguang Zhu Division of Microelectronics, School of Electrical & Electronic Engineering Nanyang Technological University, Singapore 639798, Singapore ewzhu@ntu.edu.sg Board Members Marin Alexe Max Planck Institute of Microstructure Physics Weinberg 2, 06120 Halle (Saale), Germany malexe@mpi-halle.mpg.de Miguel Algueró Instituto de Ciencia de Materiales de Madrid (ICMM) Consejo Superior de Investigaciones Científicas (CSIC) Cantoblanco, Madrid 28049, Spain malguero@icmm.csic.es Amar Bhalla Department of Electrical and Computer Engineering University of Texas at San Antonio San Antonio, TX 78249, USA amar.bhalla@utsa.edu Alexei A. Bokov Simon Fraser University Burnaby, BC, V5A 1S6, CANADA abokov@sfu.ca David Cann School of Mechanical, Industrial, and Mechanical Engineering Oregon State University, Corvallis, OR 97331, USA cann@engr.orst.edu Yanfeng Chen Department of Materials Science and Engineering National Laboratory of Solid-State Microstructures Nanjing University, Nanjing 210093, P.R. China yfchen@nju.edu.cn Zhongyang Cheng Materials Engineering 275 Wilmore Lab, Auburn University, AL 36849, USA chengzh@eng.auburn.edu Dragan Damjanovic Ceramics Laboratory, Institute of Materials, School of Engineering, EPFL EPFL-STI-IMX-LC, Station 12, CH-1015 Lausanne, Switzerland dragan.damjanovic@epfl.ch José Antonio Eiras Grupo de Cerâmicas Ferroelétricas Universidade Federal de São Carlos Rod. Washington Luis, km 235, São Carlos - SP - Brasil eiras@df.ufscar.br Catherine Elissalde Institute of Condensed Matter Chemistry of Bordeaux (ICMCB) - CNRS, 87 Avenue du Docteur A. Schweitzer, 33608 Pessac cedex, France elissald@icmcb-bordeaux.cnrs.fr Chunlin Jia Institut für Festkörperforschung Forschungszentrum Jülich 52425 Jülich, Germany c.jia@fz-juelich.de Andrei Kholkin DECV & CICECO, University of Aveiro 3810-193 Aveiro, Portugal kholkin@ua.pt Eung Soo Kim Department of Materials Engineering Kyonggi University Suwon 443-760, Korea eskim@kyonggi.ac.kr Yan-Rong Li School of Microelectronics and Solid-State Electronics University of Electronics Science and Technology of China No.4, Section 2, North Jianshe Road, Chengdu 610054, P.R. China yrli@uestc.edu.cn Yongxiang Li Shanghai Institute of Ceramics, Chinese Academy of Sciences 1295 Dingxi Road, Shanghai 200050, P.R. China yxli@mail.sic.ac.cn Yun Liu Research School of Chemistry The Australian National University, ACT 0200, Australia yliu@rsc.anu.edu.au Hanxing Liu School of Materials Science and Engineering Wuhan University of Technology 122 Luoshi Road, Wuhan 430070, P.R. China lhxhp@whut.edu.cn Cewen Nan Department of Material Science and Engineering Tsinghua University, Beijing 100084, P.R. China cwnan@mail.tsinghua.edu.cn Shashank Priya Mechanical Engineering Virginia Tech 310 Durham Hall, Blacksburg, VA 24061, USA spriya@vt.edu Yimnirun Rattikorn School of Physics, Institute of Science Suranaree University of Technology Nakhon Ratchasima 30000, Thailand rattikorn@sut.ac.th Mike Reece Eng 336, Department of Materials Queen Mary, University of London London E1 4NS, UK m.j.reece@qmul.ac.uk Wei Ren Electronic Materials Research Laboratory (EMRL) Xi'an Jiaotong University, Xi'an 710049, P.R. China wren@mail.xjtu.edu.cn Vladimir Ya. Shur Ferroelectric Laboratory, Institute of Physics & Applied Mathematics Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russia Vladimir.shur@usu.ru R. P. Tandon Department of Physics and Astrophysics University of Delhi, Delhi-110007, India ram_tandon@hotmail.com Tseung-Yuen Tseng Department of Electronics Engineering & Institute of Electronics National Chiao-Tung University 1001 Ta Hsueh Road, Hsinchu 300, Taiwan tseng@cc.nctu.edu.tw Takaaki Tsurumi Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan ttsurumi@ceram.titech.ac.jp Chunlei Wang School of Physics, Shandong University 27 South Shanda Road, Jinan 250100, P.R. China wangcl@sdu.edu.cn Yugong Wu School of Electronic and Information Engineering Tianjin University, 92 Weijing Road, Tianjin 300072, P.R. China wuyugong@tju.edu.cn Kai Wu State Key Lab. of Power Equipment and Electrical Insulation Xi'an Jiaotong University, Xi'an 710049, P. R. China wukai@mail.xjtu.edu.cn Jiwei Zhai Functional Materials Research Laboratory (FMRL) Tongji University, 1239 Siping Road, Shanghai 200092, P.R. China apzhai@mail.tongji.edu.cn Jianguo Zhu College of Materials Science and Engineering Sichuan University, Wangjiang Road 29, Chengdu 610064, P.R. China nic0400@scu.edu.cn 目前第一卷四期都已出版，第二卷已经完成了两期的稿件。到第三卷就可以sci检索了。大家想投稿的，赶快了。等sci检索了，稿件量就要剧增了，要投稿的赶紧，呵呵  主页：http://www.worldscinet.com/jad 最新文章列表 http://www.worldscinet.com/jad/01/0104/S2010135X110104.html 欢迎来信咨询 |
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ceramic: 回帖置顶 2012-06-07 15:10:40
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Volume: 2, Issue: 1(2012) 1230002 (15 pages) DOI: 10.1142/S2010135X12300022 Abstract | Full Text (PDF, 1,744KB) | References Title: RELAXOR FERROELECTRIC MATERIALS FOR MICROWAVE TUNABLE APPLICATIONS Author(s): QIWEI ZHANG, JIWEI ZHAI, LING BING KONG Abstract: With strong dependences of dielectric constant on external applied electric fields, relaxor barium zirconium titanate (BaZrxTi1-xO3 or BZT) and barium stannate titanate (BaSnxTi1-xO3 or BTS), in both bulk ceramic and thin film forms, are increasingly being recognized as potential candidates of microwave tunable materials for device applications. This paper is aimed to review the recent progress in understanding the dielectric properties (such as tunability, dielectric loss and dielectric constant) of these relaxor materials. However, due to their relatively high dielectric constant and loss tangent, pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 do not fully satisfy the requirements of practical device applications. Therefore, various strategies have been developed to improve the dielectric properties of these two groups of relaxor materials. In this paper, we first discussed the dielectric tunability characteristics of pure Ba(Zr,Ti)O3 and Ba(Sn,Ti)O3 and then summarized the strategies that have been used, including (i) small amount acceptor or donor doping (such as rare-earth ions and transition metal ions) and (ii) forming composites with low loss and low dielectric constant microwave dielectric materials (such as MgO, MgTiO3 and so on). At the same time, the relationship between relaxor behavior and dielectric tunability was also discussed. Keywords: Relaxor materials; barium zirconium titanate; barium stannate titanate; dielectric tunability; ferroelectric composites  [ Last edited by ceramic on 2012-6-7 at 15:19 ] |
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2012-06-07 15:10:22, 1.7 M
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简单回复
tianma33311楼
2011-12-25 11:50
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ceramic(金币+1):谢谢参与
majingjie314楼
2011-12-25 11:59
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ceramic(金币+1):谢谢参与