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295435736金虫 (小有名气)
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[求助]
请教一段话的翻译---中翻英
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| 从图5可以看出极板间SiH3摩尔分数呈非均匀性分布，即在衬底中心处浓度较高，而在边缘处浓度较低。为了对沉积过程中复杂的物理和化学过程进行简化，本文将反应室内SiH3摩尔分数分布近似为等离子体分布。由SiH3摩尔分数分布计算出极板间不同区域的等离子体相对介电常数，由此得出不同间距的极板电场分布如图6所示。由于极板间距的增大，极板间流场分布的不均匀性也随着增大，当加载射频功率后，受驻波效应和边缘效应的影响，电场分布的不均匀性也随之增大。图7中当极板间距为10 mm时，电场分布最为均匀，其非均匀性小于5%。 |
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alvarohao
铁杆木虫 (著名写手)
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爱与雨下(金币+1): 2011-10-29 11:54:08
295435736(金币+75, 翻译EPI+1): 都一般吧，改了好久 2011-10-29 15:29:17
爱与雨下(金币+1): 2011-10-29 11:54:08
295435736(金币+75, 翻译EPI+1): 都一般吧，改了好久 2011-10-29 15:29:17
| As can be seen from Fig.5, the molar proportions of SiH3 between the polar plates had a non-uniform distribution, with densities higher in the center of the substrate and lower in its edges. In this paper, to simplify the complicated physical and chemical procedure of the deposition, the distribution of the SiH3 molar proportions in the reaction chamber was approximated as the plasma distribution. The plasma’s relative dielectric constants in different areas between the polar plates were calculated from the SiH3 molar proportions, and were used to obtain the electric field distributions of the polar plates with different intervals which were shown in Fig.6. Because of the increasing of the polar plates’ interval, the non uniformity of the flow field distribution between the polar plates was also increased, and when the radio frequency power was loaded, affected by the standing wave effect and the edge effect, the non uniformity of the electric field distribution was also increased. In Fig.7, when the interval between the polar plates was 10 mm, the uniformity of the electric field distribution was the biggest, with non uniformity less than 5%. |
2楼2011-10-29 11:47:21
tcollar
木虫 (小有名气)
水上漂
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爱与雨下(金币+1): 2011-10-29 11:54:14
295435736(金币+75): 都一般吧，改了好久 2011-10-29 15:29:36
爱与雨下(金币+1): 2011-10-29 11:54:14
295435736(金币+75): 都一般吧，改了好久 2011-10-29 15:29:36
| Figure 5 shows that the molar fraction distribution of SiH3 was not uniform in between the cathode and anode. More SiH3 can be found around the center of the base plate and less around the edges. To simplify the description of the deposition process, the molar fraction distribution of SiH3 is assumed to be plasma density distribution. The relative dielectric constants of the plasma in between the cathode and anode are calculated based on the molar fraction distribution of SiH3, from which electric field distribution is derived, as depicted in Figure 6. As the distance between the cathode and anode rises, the inhomogeneity of the electric field increases. On the other hand, standing wave effect and edge effect induced by the radio frequency also contribute to the inhomogeneity of the electric field. When the anode is 10 mm away from the cathode, the most homogeneous electric field is achieved, with inhomogeneity<5% (Figure 7). |
3楼2011-10-29 11:49:30
