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sltmac
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yy08(½ð±Ò+5, ·ÒëEPI+1): лл 2011-09-29 20:30:23
°®ÓëÓêÏÂ(½ð±Ò+1): £¡~ 2011-09-29 20:31:49
°®ÓëÓêÏÂ(½ð±Ò+25): bb´ú·¢ 2011-10-08 08:42:03
yy08(½ð±Ò+5, ·ÒëEPI+1): лл 2011-09-29 20:30:23
°®ÓëÓêÏÂ(½ð±Ò+1): £¡~ 2011-09-29 20:31:49
°®ÓëÓêÏÂ(½ð±Ò+25): bb´ú·¢ 2011-10-08 08:42:03
| Certainly£¬the results we calculated still have a distance when compared with the experimental values, the errors could be generated during the process of calculation. We also found from previous literatures that the approximate method of GW is in good agreement with the wide band gap semiconductors but not very well with the narrow ones. |

2Â¥2011-09-29 18:28:33
ÅÝÅÝ2011
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yy08(½ð±Ò+5): лл 2011-09-29 20:30:42
yy08(½ð±Ò+5): лл 2011-09-29 20:30:53
°®ÓëÓêÏÂ(½ð±Ò+1): £¡~ 2011-09-29 20:32:05
°®ÓëÓêÏÂ(½ð±Ò+10): bb´ú·¢ 2011-10-08 08:42:13
yy08(½ð±Ò+5): лл 2011-09-29 20:30:42
yy08(½ð±Ò+5): лл 2011-09-29 20:30:53
°®ÓëÓêÏÂ(½ð±Ò+1): £¡~ 2011-09-29 20:32:05
°®ÓëÓêÏÂ(½ð±Ò+10): bb´ú·¢ 2011-10-08 08:42:13
| Indeed, there's certain gap between our caculations and experimental results, which may be caused by the caculation error itself. From previous references, it can be found that GW approximation exhibits a rather good correction to wide band-gap semiconductor. But to narrow band-gap semiconductor, it does not function well. |
3Â¥2011-09-29 18:40:29
ÅÝÅÝ2011
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4Â¥2011-09-29 18:42:32
ÅÝÅÝ2011
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|
¶Ô±ÈÏ£¬1Â¥µÄ·ÒëÓÐÁÁµãÖµµÃѧϰ Indeed, there's certain distance between our caculations and experimental results, which may be caused by the caculation eprocess. From previous references, it can be found that GW approximation exhibits a rather good correction to wide band-gap semiconductor but not very well to narrow band-gap semiconductor. |
5Â¥2011-09-29 18:46:18
editorlin
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6Â¥2011-09-29 22:57:35













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