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yy08木虫 (著名写手)
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[求助]
求翻译
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首先感谢大家！要翻译的内容如下： 的确，我们的计算结果和实验值还是有一定的差距，可能是因为计算本身的误差造成的。从以前的文献中也可以发现，GW近似方法对宽带隙半导体的修正结果较好，但是对窄带隙的半导体修正结果不太理想。 |
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【答案】应助回帖
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yy08(金币+5, 翻译EPI+1): 谢谢 2011-09-29 20:30:23
爱与雨下(金币+1): ！~ 2011-09-29 20:31:49
爱与雨下(金币+25): bb代发 2011-10-08 08:42:03
yy08(金币+5, 翻译EPI+1): 谢谢 2011-09-29 20:30:23
爱与雨下(金币+1): ！~ 2011-09-29 20:31:49
爱与雨下(金币+25): bb代发 2011-10-08 08:42:03
| Certainly，the results we calculated still have a distance when compared with the experimental values, the errors could be generated during the process of calculation. We also found from previous literatures that the approximate method of GW is in good agreement with the wide band gap semiconductors but not very well with the narrow ones. |
2楼2011-09-29 18:28:33
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yy08(金币+5): 谢谢 2011-09-29 20:30:42
yy08(金币+5): 谢谢 2011-09-29 20:30:53
爱与雨下(金币+1): ！~ 2011-09-29 20:32:05
爱与雨下(金币+10): bb代发 2011-10-08 08:42:13
yy08(金币+5): 谢谢 2011-09-29 20:30:42
yy08(金币+5): 谢谢 2011-09-29 20:30:53
爱与雨下(金币+1): ！~ 2011-09-29 20:32:05
爱与雨下(金币+10): bb代发 2011-10-08 08:42:13
| Indeed, there's certain gap between our caculations and experimental results, which may be caused by the caculation error itself. From previous references, it can be found that GW approximation exhibits a rather good correction to wide band-gap semiconductor. But to narrow band-gap semiconductor, it does not function well. |
3楼2011-09-29 18:40:29
4楼2011-09-29 18:42:32
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对比下，1楼的翻译有亮点值得学习 Indeed, there's certain distance between our caculations and experimental results, which may be caused by the caculation eprocess. From previous references, it can be found that GW approximation exhibits a rather good correction to wide band-gap semiconductor but not very well to narrow band-gap semiconductor. |
5楼2011-09-29 18:46:18
6楼2011-09-29 22:57:35
