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Despite being atomically thin, the films remain of high
quality, so that 2D electronic transport is ballistic at submicrometer distances.
No other film of similar thickness is known to be even poorly metallic or continuousunder ambient conditions.
Using FLG, we demonstrate a metallic field-effect transistor in which the conducting channel can be switched between 2D electron and hole gasesby changing the gate voltage.

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even poorly metallic or continuous under ambient conditions.
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switched between 2D electron and hole gases
2D electron and hole gases
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sltmac(½ð±Ò+1): лл½»Á÷~ 2011-09-29 08:51:38
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2D electronic transport is ballistic at submicrometer distances¡£
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No other film of similar thickness is known to be even poorly metallic or continuousunder ambient conditions.
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a metallic field-effect transistor in which the conducting channel can be switched between 2D electron and hole gasesby changing the gate voltage.
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