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doping rules·½ÃæµÄÒÉÎÊ
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n-type doping is facilitated by materials whose conduction band minima £¨CBM£© are far from the vacuum level, i.e., materials with large bulk-intrinsic electron affini- ties x. Conversely, n-type doping tends to be compensated in materials with small bulk-intrinsic electron affinities. p-type doping is facilitated by materials whose VBM is close to the vacuum level, i.e., small bulk-intrinsic ionization potential F. Conversely, p-type doping tends to be compensated in materials with large bulk-intrinsic ionization energies.¡¯¡¯ ÈçºÎÀí½âÉÏÃæÁ½¶Î»°£¿ |
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