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[求助] doping rules方面的疑问

n-type doping is facilitated by materials whose conduction band minima (CBM) are far from the vacuum level, i.e., materials with large bulk-intrinsic electron affini-
ties x. Conversely, n-type doping tends to be compensated in materials with small bulk-intrinsic electron affinities.
p-type doping is facilitated by materials whose VBM is close to the vacuum level, i.e., small bulk-intrinsic ionization potential F. Conversely, p-type doping tends to be
compensated in materials with large bulk-intrinsic ionization energies.’’

如何理解上面两段话?
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