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聚合物/ZnO太阳能复合电池 将部分引言翻译成中文
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For example,it is believed that the high concentration of surface defects will increase the carrier recombination at the D/A interface and frequently reduce the device performance, but no reports on the electron lifetime related to the structural properties of ZnO nanorods are available for the polymer/ZnO nanorod array devices, except for the observation of a remarkably slow charge recombination with a half-life of several milliseconds in such devices with dye-sensitized ZnO nanorods by transient absorption spectroscopy. Herein, we study the effects of the structural properties of ZnO nanorods on the charge recombination and device perfor manceinthesolarcellsconsistingofpoly(1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene) (MEH-PPV) and vertically aligned ZnO nanorod arrays. The high quality ZnO nanorod arrays were prepared by electrodeposition, where the ZnO nanorod length (Ln) and concentration of deep level defects were controlled by deposition time (Td); the electron lifetime (τe) related to the interfacial charge recombination in the MEH-PPV/ZnO device was obtained by intensity modulated photovoltage spectroscopy (IMVS). The results demonstrate that the photocurrent and recombination rate in such devices are mainly dependent on Ln rather than the defect concentration, and that both charge recombination and intraband defects impose influences on the open circuit voltage (Voc) of the devices but Voc is much more sensitive to the defect concentration. [ Last edited by yanjiao12 on 2011-7-12 at 16:40 ] |
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sltmac
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2楼2011-07-12 16:54:47
sltmac
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【答案】应助回帖
yanjiao12(金币+40, 翻译EPI+1): 谢谢高手喔 2011-07-12 19:35:22
yanjiao12(金币+10): 好啊 2011-07-12 19:49:50
yanjiao12(金币+10): 好啊 2011-07-12 19:49:50
| 比如，通常认为表面缺陷的高度集中会增加D/A表面载流子的再复合以及降低器件的性能，但没有关于电子寿命与用来制备聚合物/ZnO器件的棒状结构性能关系的报道，除非通过瞬态吸收光谱能够显著地观察到在几毫秒内电荷在器件中缓慢再复合的半衰期。鉴于此，我们研究了ZnO纳米棒结构性能对含有MEH-PPV太阳能电池性能的影响。这样高质量的ZnO纳米棒是通过电沉积方法制备的，此ZnO纳米棒的长度（Ln）以及缺陷集中程度可以通过沉积时间（Td）；电子寿命（Te）得到控制，其中电子寿命与MEH-PPV/ZnO器件中界面电荷的再复合有关，可以通过强度调制光电压谱(IMVS)观察到。结果表明，器件中的光电流以及电荷的再复合率取决于Ln而不是缺陷集中程度，电荷的再复合以及带内的缺陷对开路电压（Voc）有很大的影响，但Voc对缺陷集中程度也很敏感。 |
3楼2011-07-12 17:14:01
