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zhigang985(½ð±Ò+30, ·ÒëEPI+1): лл 2011-05-08 09:31:47
| According to the relationship between the edge of optical absorption with band gap energy Eg wavelength in the semiconductor materials: ¦Ë (nm) = 1240/Eg (eV), it showed that at 300 K , the bulk absorption edge of X was 689 nm, and the wavelength range was in the red spectra area , indicating that it could absorb UV and visible light. Meanwhile, it could further showed that X had a broad potential applications in the field of optoelectronic materials, , especially in the visible-light photocatalytic applications. |

2Â¥2011-05-07 21:56:25
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zhigang985(½ð±Ò+20): лл 2011-05-08 09:31:57
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¸ù¾Ý°ëµ¼Ìå²ÄÁϵĹâÎüÊձ߲¨³¤Óë´øÏ¶ÄÜEgµÄ¹ØÏµ£º¦Ë(nm)=1240/Eg(eV)¿ÉÖª£¬300 KʱÌåÏàµÄXµÄÎüÊÕ±ßΪ689 nm£¬´¦ÔÚºì¹âµÄ²¨³¤·¶Î§£¬ËµÃ÷Æä¿ÉÒÔÎüÊÕ×ÏÍâºÍ¿É¼û¹â¡£Í¬Ê±£¬½øÒ»²½ËµÃ÷XÔÚ¹âµç²ÄÁÏÁìÓòÓÐDZÔÚµÄÓ¦ÓÃǰ¾°£¬ÓÈÆäÔڿɼû¹âÇøµÄ¹â´ß»¯·½Ãæ¾ßÓйãÀ«µÄÓ¦Óÿռ䡣 according to the relationship between the optical absorption edge and band gap of semiconductors, ¦Ë(nm)=1240/Eg, the absorption edge of X at 300 K is at 689 nm in the red region indicating the ability to absorb uv and visible light, which further demostrate the potential applications of X in photoelectric materials, especially the promising applications as photocatalysts in the visible region. |
3Â¥2011-05-07 22:14:47













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