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zhigang985银虫 (小有名气)
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[求助]
无机化学，请教高手翻译一段话.不胜感激。
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| 根据半导体材料的光吸收边波长与带隙能Eg的关系：λ(nm)=1240/Eg(eV)可知，300 K时体相的X的吸收边为689 nm，处在红光的波长范围，说明其可以吸收紫外和可见光。同时，进一步说明X在光电材料领域有潜在的应用前景，尤其在可见光区的光催化方面具有广阔的应用空间。 |
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zhigang985(金币+30, 翻译EPI+1): 谢谢 2011-05-08 09:31:47
| According to the relationship between the edge of optical absorption with band gap energy Eg wavelength in the semiconductor materials: λ (nm) = 1240/Eg (eV), it showed that at 300 K , the bulk absorption edge of X was 689 nm, and the wavelength range was in the red spectra area , indicating that it could absorb UV and visible light. Meanwhile, it could further showed that X had a broad potential applications in the field of optoelectronic materials, , especially in the visible-light photocatalytic applications. |
2楼2011-05-07 21:56:25
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【答案】应助回帖
zhigang985(金币+20): 谢谢 2011-05-08 09:31:57
|
根据半导体材料的光吸收边波长与带隙能Eg的关系：λ(nm)=1240/Eg(eV)可知，300 K时体相的X的吸收边为689 nm，处在红光的波长范围，说明其可以吸收紫外和可见光。同时，进一步说明X在光电材料领域有潜在的应用前景，尤其在可见光区的光催化方面具有广阔的应用空间。 according to the relationship between the optical absorption edge and band gap of semiconductors, λ(nm)=1240/Eg, the absorption edge of X at 300 K is at 689 nm in the red region indicating the ability to absorb uv and visible light, which further demostrate the potential applications of X in photoelectric materials, especially the promising applications as photocatalysts in the visible region. |
3楼2011-05-07 22:14:47