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zhigang985(金币+30, 翻译EPI+1): 谢谢 2011-05-08 09:31:47
According to the relationship between the edge of optical absorption   with band gap energy Eg wavelength in the semiconductor materials: λ (nm) = 1240/Eg (eV), it  showed that at 300 K ,  the bulk absorption edge of X was 689 nm, and the wavelength range was in the red spectra area , indicating that it could absorb UV and visible light. Meanwhile, it could further showed that  X  had a broad  potential applications in the field of optoelectronic materials, , especially in the visible-light photocatalytic applications.
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2楼2011-05-07 21:56:25
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