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Oxygen-Plasma atmosphere annealing temperature and annealing time on the photoluminescence (PL) spectra and Fourier Transform Infrared Spectrometry of porous silicon (PS) have been investigated. Annealing for 10 to 120 min causes the Gaussian band with energies 2.16 eV increase in intensity as well as the Gaussian bands with energies 2.06 eV and 1.95 eV decrease in intensity and reduces the nanocrystalline size to 0.45~0.1 nm. ÎÒÒª±í´ïµÄÒâ˼ÊÇ£º ½«¶à¿×¹è£¨porous silicon, PS£©ÑùÆ·ÔÚÑõµÈÀë×ÓÌå»·¾³ÖÐÍË»ð£¬Ì½¾¿ÁËÍË»ðζȺÍʱ¼ä¶ÔPS¹âÑ§ÌØÐÔµÄÓ°Ï죬ͨ¹ý¹âÖ·¢¹â£¨PL£©¹âÆ×ºÍ¸µÀïÒ¶±ä»»ºìÍâ¹âÆ×¶ÔÑùÆ·½øÐÐÁË·ÖÎö¡£ ´óϺ°ïÎҸĸÄÓ¢Óï±í´ï |
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½«¶à¿×¹è£¨porous silicon, PS£©ÑùÆ·ÔÚÑõµÈÀë×ÓÌå»·¾³ÖÐÍË»ð£¬Ì½¾¿ÁËÍË»ðζȺÍʱ¼ä¶ÔPS¹âÑ§ÌØÐÔµÄÓ°Ï죬ͨ¹ý¹âÖ·¢¹â£¨PL£©¹âÆ×ºÍ¸µÀïÒ¶±ä»»ºìÍâ¹âÆ×¶ÔÑùÆ·½øÐÐÁË·ÖÎö¡£ The effects of annealing temperature and annealing time under oxygen-plasma atmosphere on the photoluminescence (PL) spectra and Fourier transform infrared spectrometry of porous silicon (PS) were investigated. |
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