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Oxygen-Plasma atmosphere annealing temperature and annealing time on the photoluminescence (PL) spectra and Fourier Transform Infrared Spectrometry of porous silicon (PS) have been investigated. Annealing for 10 to 120 min causes the Gaussian band with energies 2.16 eV increase in intensity as well as the Gaussian bands with energies 2.06 eV and 1.95 eV decrease in intensity and reduces the nanocrystalline size to 0.45~0.1 nm. 我要表达的意思是： 将多孔硅（porous silicon, PS）样品在氧等离子体环境中退火，探究了退火温度和时间对PS光学特性的影响，通过光致发光（PL）光谱和傅里叶变换红外光谱对样品进行了分析。 大虾帮我改改英语表达  |
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liping6065(金币+5, 翻译EPI+1): 2011-01-05 09:48:03
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将多孔硅（porous silicon, PS）样品在氧等离子体环境中退火，探究了退火温度和时间对PS光学特性的影响，通过光致发光（PL）光谱和傅里叶变换红外光谱对样品进行了分析。 The effects of annealing temperature and annealing time under oxygen-plasma atmosphere on the photoluminescence (PL) spectra and Fourier transform infrared spectrometry of porous silicon (PS) were investigated. |
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