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The effect of Ts on the crystalline structure, electrical, and optical properties of the as-deposited AZO films formed by a DCP-sputtering technique has been systematically investigated by X-ray diffractometry, scanning electron microscopy, four-point probe, and spectrophotometry. Several conclusions can be drawn as follows: (1) The asdeposited AZO films formed after 3 h by DCP-sputtering are polycrystalline and unoriented resulting from the transition of the growth mode from the vertical (002) to the lateral (103) orientation. (2) The resistivity is not determined by the FWHM of the AZO-(002) or (103) diffraction peaks, nor by the integrated intensity ratio of the AZO-(002) to (103) diffraction peaks, but originates from the surface morphology and free carrier concentration. These, in turn, are inherently determined by substrate temperature when other deposition parameters are kept constant. (3) The as-deposited AZO films possess good transparency and the blue and red shifts of their optical absorption edges can be explained in terms of Burstein–Moss effect. High-quality μc-Si:H films on glass substrates were obtained by the combination of RF-PECVD and RTP techniques as confirmed by Raman spectrometry and X-ray diffractometry. RTP technique was effective to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically analyzing the film quantum-optical process, the RSPR mechanism of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP originated from the interaction between excited electrons and other electrons, SiHx radicals, and phonons. |
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wyez(金币+4): 2010-12-24 18:51:47
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(2) The resistivity is not determined by the FWHM of the AZO-(002) or (103) diffraction peaks, nor by the integrated intensity ratio of the AZO-(002) to (103) diffraction peaks, but originates from the surface morphology and free carrier concentration. These, in turn, are inherently determined by substrate temperature when other deposition parameters are kept constant. (3) The as-deposited AZO films possess good transparency and the blue and red shifts of their optical absorption edges can be explained in terms of Burstein–Moss effect. (2) 电阻率不是由AZO-(002)或 (103) 衍射峰的半高宽度决定，也不是由AZO-(002) 或(103)的累积强度率决定，而是由表面形貌和自由载流子浓度决定的。因而，当其它参数不变时，本质上是由衬底温度决定的。 （3）沉积得到的AZO薄膜具有良好的透光性，并且具有能够用B—M效应解释的光吸收边蓝移和和红移现象。 |
4楼2010-12-24 18:43:56
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
wyez(金币+4, 翻译EPI+1): 2010-12-24 18:51:36
ringzhu(金币+18):辛苦费~~~ 2010-12-28 14:22:04
wyez(金币+4, 翻译EPI+1): 2010-12-24 18:51:36
ringzhu(金币+18):辛苦费~~~ 2010-12-28 14:22:04
|
The effect of Ts on the crystalline structure, electrical, and optical properties of the as-deposited AZO films formed by a DCP-sputtering technique has been systematically investigated by X-ray diffractometry, scanning electron microscopy, four-point probe, and. Several conclusions can be drawn as follows: (1) The asdeposited 利用DCP溅射技术制备了AZO薄膜，并用XRD，SEM，四探针法和分光光度法对薄膜进行了表征，系统研究了衬底温度对薄膜的晶体结构和光电性能的影响。 |
2楼2010-12-24 18:24:36
wyez(金币+4): 2010-12-24 18:51:41
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Several conclusions can be drawn as follows: (1) The asdeposited AZO films formed after 3 h by DCP-sputtering are polycrystalline and unoriented resulting from the transition of the growth mode from the vertical (002) to the lateral (103) orientation. 得到以下几个结论： （1）溅射沉积3小时后的AZO薄膜由于是处在晶向（002）过渡到（103）的中间阶段，因此形成的薄膜是多晶的或无晶向的。 |
3楼2010-12-24 18:32:47
wyez(金币+10): 2010-12-24 19:09:32
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High-quality μc-Si:H films on glass substrates were obtained by the combination of RF-PECVD and RTP techniques as confirmed by Raman spectrometry and X-ray diffractometry. RTP technique was effective to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically analyzing the film quantum-optical process, the RSPR mechanism of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP originated from the interaction between excited electrons and other electrons, SiHx radicals, and phonons. 通过Raman光谱和XRD方法的表征能够确定，用RF-PECVD 及 RTP方法能够制备玻璃衬底的氢化微晶硅薄膜，RTP方法能够使氢化非晶硅在800°C经过3分钟有效地转化为氢化微晶硅。对整个过程的光量子进行理论分析，主要机理在于短波光子与基态硅，SiH2，SiH3自由基的相互作用。氢化非晶硅的热效应在于激发电子与其它电子，SiHx和声子的相互作用。 |
5楼2010-12-24 18:58:38
