| 查看: 1021 | 回复: 4 | |||
| 本帖产生 1 个 翻译EPI ，点击这里进行查看 | |||
[交流]
麻烦帮助翻译下，不是做实验的不太懂！
|
|||
|
The effect of Ts on the crystalline structure, electrical, and optical properties of the as-deposited AZO films formed by a DCP-sputtering technique has been systematically investigated by X-ray diffractometry, scanning electron microscopy, four-point probe, and spectrophotometry. Several conclusions can be drawn as follows: (1) The asdeposited AZO films formed after 3 h by DCP-sputtering are polycrystalline and unoriented resulting from the transition of the growth mode from the vertical (002) to the lateral (103) orientation. (2) The resistivity is not determined by the FWHM of the AZO-(002) or (103) diffraction peaks, nor by the integrated intensity ratio of the AZO-(002) to (103) diffraction peaks, but originates from the surface morphology and free carrier concentration. These, in turn, are inherently determined by substrate temperature when other deposition parameters are kept constant. (3) The as-deposited AZO films possess good transparency and the blue and red shifts of their optical absorption edges can be explained in terms of Burstein–Moss effect. High-quality μc-Si:H films on glass substrates were obtained by the combination of RF-PECVD and RTP techniques as confirmed by Raman spectrometry and X-ray diffractometry. RTP technique was effective to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically analyzing the film quantum-optical process, the RSPR mechanism of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP originated from the interaction between excited electrons and other electrons, SiHx radicals, and phonons. |
回复此楼» 猜你喜欢
filecode
已经有7人回复
-
大家散了吧，后缀研究没有意义，别浪费时间了，过好目前的每一天，不要焦虑
已经有4人回复
-
filecode
已经有5人回复
-
求各位大神看下
已经有31人回复
-
咨询面上基金
已经有7人回复
-
影响面上的因素
已经有11人回复
-
8月时间戳变的，举个手。玩一下，释放压力
已经有11人回复
-
一个有机合成实验室都需要哪些设备？
已经有11人回复
-
面上再次挂了，太难了，躺也躺不了，倦也卷不过，小学校之殇！
已经有30人回复
-
好消息？这个有何含义？？？
已经有10人回复
» 抢金币啦！回帖就可以得到:
-
祈福
+5/660
-
一边期待，一边忐忑：发榜前的科研人正在想什么？
+5/235
-
3-羟基丙腈（CAS：109-78-4）
+1/90
-
三氟甲基亚磺酸锂
+1/88
-
香港城市大学郑星课题组诚聘博士后 (生态学、环境科学、植物学、大气科学背景)
+1/85
-
南京大学医工交叉方向薛璐璐团队招聘脂质纳米材料与RNA递送方向博士后1-2名
+1/73
-
2027 Chemical Engineering Ph.D 招生
+1/48
-
中国科学院西双版纳热带植物园人事处招聘
+1/42
-
中科院东莞材料所依托中科大招收2027届推免生
+1/33
-
同济大学环境学院肖倩课题组2026年补充招收推免生
+1/31
-
澳大利亚 Murdoch University 全奖博士招生（3个名额）地质化工冶金领域
+1/25
-
双一流高校招收博士（现代技术管理/环境技术经济管理）及硕士研究生（长期有效）
+1/16
-
福建师范大学海峡柔性电子学院-2027年9月入学博士-考核制-电催、能源
+1/8
-
高弯曲强度玻璃制品的特殊加工工艺
+1/4
-
国家纳米科学中心段鹏飞课题组招收2027年入学博士研究生
+1/4
-
北京师范大学（珠海校区）赵亚然副教授招收2027年电催化硕士/博士研究生
+1/3
-
北京理工大学-集成电路与电子学院杰青团队-招博士后
+1/3
-
北理工集成电路杰青团队 | 诚招科助理
+1/3
-
2026年University of South Carolina继续招收博士生
+1/2
-
致每一位等待国自然结果的科研人：我们想听听你的心声
+1/1
★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★ ★
wyez(金币+4, 翻译EPI+1): 2010-12-24 18:51:36
ringzhu(金币+18):辛苦费~~~ 2010-12-28 14:22:04
wyez(金币+4, 翻译EPI+1): 2010-12-24 18:51:36
ringzhu(金币+18):辛苦费~~~ 2010-12-28 14:22:04
|
The effect of Ts on the crystalline structure, electrical, and optical properties of the as-deposited AZO films formed by a DCP-sputtering technique has been systematically investigated by X-ray diffractometry, scanning electron microscopy, four-point probe, and. Several conclusions can be drawn as follows: (1) The asdeposited 利用DCP溅射技术制备了AZO薄膜，并用XRD，SEM，四探针法和分光光度法对薄膜进行了表征，系统研究了衬底温度对薄膜的晶体结构和光电性能的影响。 |
2楼2010-12-24 18:24:36
wyez(金币+4): 2010-12-24 18:51:41
|
Several conclusions can be drawn as follows: (1) The asdeposited AZO films formed after 3 h by DCP-sputtering are polycrystalline and unoriented resulting from the transition of the growth mode from the vertical (002) to the lateral (103) orientation. 得到以下几个结论： （1）溅射沉积3小时后的AZO薄膜由于是处在晶向（002）过渡到（103）的中间阶段，因此形成的薄膜是多晶的或无晶向的。 |
3楼2010-12-24 18:32:47
wyez(金币+4): 2010-12-24 18:51:47
|
(2) The resistivity is not determined by the FWHM of the AZO-(002) or (103) diffraction peaks, nor by the integrated intensity ratio of the AZO-(002) to (103) diffraction peaks, but originates from the surface morphology and free carrier concentration. These, in turn, are inherently determined by substrate temperature when other deposition parameters are kept constant. (3) The as-deposited AZO films possess good transparency and the blue and red shifts of their optical absorption edges can be explained in terms of Burstein–Moss effect. (2) 电阻率不是由AZO-(002)或 (103) 衍射峰的半高宽度决定，也不是由AZO-(002) 或(103)的累积强度率决定，而是由表面形貌和自由载流子浓度决定的。因而，当其它参数不变时，本质上是由衬底温度决定的。 （3）沉积得到的AZO薄膜具有良好的透光性，并且具有能够用B—M效应解释的光吸收边蓝移和和红移现象。 |
4楼2010-12-24 18:43:56
wyez(金币+10): 2010-12-24 19:09:32
|
High-quality μc-Si:H films on glass substrates were obtained by the combination of RF-PECVD and RTP techniques as confirmed by Raman spectrometry and X-ray diffractometry. RTP technique was effective to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically analyzing the film quantum-optical process, the RSPR mechanism of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP originated from the interaction between excited electrons and other electrons, SiHx radicals, and phonons. 通过Raman光谱和XRD方法的表征能够确定，用RF-PECVD 及 RTP方法能够制备玻璃衬底的氢化微晶硅薄膜，RTP方法能够使氢化非晶硅在800°C经过3分钟有效地转化为氢化微晶硅。对整个过程的光量子进行理论分析，主要机理在于短波光子与基态硅，SiH2，SiH3自由基的相互作用。氢化非晶硅的热效应在于激发电子与其它电子，SiHx和声子的相互作用。 |
5楼2010-12-24 18:58:38
