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wyez

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The effect of Ts on the crystalline structure, electrical, and optical
properties of the as-deposited AZO films formed by a DCP-sputtering
technique has been systematically investigated by X-ray diffractometry,
scanning electron microscopy, four-point probe, and spectrophotometry.
Several conclusions can be drawn as follows: (1) The asdeposited
AZO films formed after 3 h by DCP-sputtering are
polycrystalline and unoriented resulting from the transition of the
growth mode from the vertical (002) to the lateral (103) orientation.
(2) The resistivity is not determined by the FWHM of the AZO-(002)
or (103) diffraction peaks, nor by the integrated intensity ratio of
the AZO-(002) to (103) diffraction peaks, but originates from the
surface morphology and free carrier concentration. These, in turn, are
inherently determined by substrate temperature when other deposition
parameters are kept constant. (3) The as-deposited AZO films
possess good transparency and the blue and red shifts of their optical
absorption edges can be explained in terms of Burstein–Moss effect.


High-quality μc-Si:H films on glass substrates were obtained by the
combination of RF-PECVD and RTP techniques as confirmed by Raman
spectrometry and X-ray diffractometry. RTP technique was effective
to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically
analyzing the film quantum-optical process, the RSPR mechanism of
a-Si:H film by RTP was theoretically mainly attributed to the
interaction between short-wavelength photons and ground-state
silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP
originated from the interaction between excited electrons and other
electrons, SiHx radicals, and phonons.

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