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The effect of Ts on the crystalline structure, electrical, and optical properties of the as-deposited AZO films formed by a DCP-sputtering technique has been systematically investigated by X-ray diffractometry, scanning electron microscopy, four-point probe, and spectrophotometry. Several conclusions can be drawn as follows: (1) The asdeposited AZO films formed after 3 h by DCP-sputtering are polycrystalline and unoriented resulting from the transition of the growth mode from the vertical (002) to the lateral (103) orientation. (2) The resistivity is not determined by the FWHM of the AZO-(002) or (103) diffraction peaks, nor by the integrated intensity ratio of the AZO-(002) to (103) diffraction peaks, but originates from the surface morphology and free carrier concentration. These, in turn, are inherently determined by substrate temperature when other deposition parameters are kept constant. (3) The as-deposited AZO films possess good transparency and the blue and red shifts of their optical absorption edges can be explained in terms of Burstein–Moss effect. High-quality μc-Si:H films on glass substrates were obtained by the combination of RF-PECVD and RTP techniques as confirmed by Raman spectrometry and X-ray diffractometry. RTP technique was effective to transform a-Si:H into μc-Si:H at 800 °C for 3 min. Theoretically analyzing the film quantum-optical process, the RSPR mechanism of a-Si:H film by RTP was theoretically mainly attributed to the interaction between short-wavelength photons and ground-state silicon, SiH2 and SiH3 radicals. The thermal effect of a-Si:H film by RTP originated from the interaction between excited electrons and other electrons, SiHx radicals, and phonons. |
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