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1. Part of the silicon layer was masked and dry etched with SF6 gas to allow connection of the current-collector to the outside circuit. 2.The discrepancy between the two values never exceeded 20% thus indicating dense films. 3.The composition of the composites was estimated on the basis of a yield of 42% from pitch to carbon and no weight loss for graphite and silicon. 4.Milling was performed in a 45ml stainless steel grinding bowl with an O-ring seal. 5.Si powder (average particle size 80 nm) and PVA(Aldrich) or sucrose with weight ratios of silicon vs PVA or sucrose from 1:9 to 7:3 were mechanically milled for 10 h to obtain Si¨Cpolymer composites with the Si particles coated with polymer. |
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