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materialsci木虫 (正式写手)
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[求助]
麻烦帮忙查文章是否被检索？
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| 哪位好友能帮我查一下文章“Progress in Natural Science: Materials International 26 (2016) 163–168”是否被web of science检索，如果检索了，帮我把检索网页抓图发一下，多谢！添麻烦了 |
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baiyuefei
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风雪
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lazy锦溪: LS-EPI+1 2016-09-01 14:13:27
lazy锦溪: LS-EPI+1 2016-09-01 14:13:27
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https://apps.webofknowledge.com/ ... age=1&doc=7 In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography 作者:Chen, X (Chen, Xiao)[ 1,2 ] ; Wang, YG (Wang, Yanguo)[ 2 ] ; Guo, J (Guo, Jie)[ 3 ] ; Jian, JK (Jian, Jikang)[ 3 ] ; Gu, L (Gu, Lin)[ 2,4 ] ; Zhang, ZH (Zhang, Zhihua)[ 1 ] PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL 卷: 26 期: 2 页: 163-168 DOI: 10.1016/j.pnsc.2016.03.009 出版年: APR 2016 查看期刊信息 PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL 出版商 ELSEVIER SCIENCE INC, 360 PARK AVE SOUTH, NEW YORK, NY 10010-1710 USA ISSN: 1002-0071 eISSN: 1745-5391 研究领域 Materials Science Science & Technology - Other Topics 摘要 In situ potential mapping of space charge (SC) layer in a single GaN nanowire (NW) contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between 68 nm and 91 nm, which correspond to the saturated SC layers at the GaN-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of GaN NWs was derived to be about 4.3*10(6) cm(-3). Our experiments demonstrate that in-situ electron holography under electric field can be a useful method to investigate SC layers and donor density in single NW and other heterostructures. (C) 2016 Chinese Materials Research Society. Production and hosting by Elsevier B.V. 关键词 作者关键词:Space charge layer; Electron holography; In-situ TEM; Semiconductor nanowire; Semiconductor-metal contact KeyWords Plus:CAPACITANCE; DIODES; SCALE 作者信息 通讯作者地址: Zhang, ZH (通讯作者) Dalian Jiaotong Univ, Liaoning Key Mat Lab Railway, Dalian 116028, Peoples R China. 增强组织信息的名称 Dalian Jiaotong University 通讯作者地址: Wang, YG (通讯作者) Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. 增强组织信息的名称 Chinese Academy of Sciences 地址: [ 1 ] Dalian Jiaotong Univ, Liaoning Key Mat Lab Railway, Dalian 116028, Peoples R China 增强组织信息的名称 Dalian Jiaotong University [ 2 ] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China 增强组织信息的名称 Chinese Academy of Sciences [ 3 ] Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China 增强组织信息的名称 Xinjiang University [ 4 ] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China 电子邮件地址:ygwang@blcm.ac.cn; zhzhang@djtu.edu.cn 基金资助致谢 基金资助机构 授权号 Major State Basic Research Development Program of China 2014CB921002 2012CB921702 National Natural Science Foundation of China 11274365 51372027 51172193 Strategic Priority Research Program of the Chinese Academy of Sciences XDB07030200 查看基金资助信息关闭基金资助信息 This work is supported by the Major State Basic Research Development Program of China under Contract nos. 2014CB921002 and 2012CB921702, the National Natural Science Foundation of China (Grant nos. 11274365, 51372027 and 51172193), and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant no. XDB07030200. 出版商 ELSEVIER SCIENCE INC, 360 PARK AVE SOUTH, NEW YORK, NY 10010-1710 USA 类别 / 分类 研究方向:Materials Science; Science & Technology - Other Topics Web of Science 类别:Materials Science, Multidisciplinary; Multidisciplinary Sciences 文献信息 文献类型:Article 语种:English 入藏号: WOS:000375607000007 ISSN: 1002-0071 eISSN: 1745-5391 其他信息 IDS 号: DL4LG Web of Science 核心合集中的 "引用的参考文献": 18 Web of Science 核心合集中的 "被引频次": 0 JCR® 类别 JCR 分区 MATERIALS SCIENCE, MULTIDISCIPLINARY Q2 数据来自第 2015 版 Journal Citation Reports® |
2楼2016-09-01 13:17:52
materialsci
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3楼2016-09-01 13:23:45
baiyuefei
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materialsci: 金币+20, ★★★★★最佳答案 2016-09-01 13:43:16
materialsci: 金币+20, ★★★★★最佳答案 2016-09-01 13:43:16
4楼2016-09-01 13:28:04
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