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materialsci: ½ð±Ò+20, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸ 2016-09-01 13:43:16
materialsci: ½ð±Ò+20, ¡ï¡ï¡ï¡ï¡ï×î¼Ñ´ð°¸ 2016-09-01 13:43:16
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lazy½õϪ: LS-EPI+1 2016-09-01 14:13:27
lazy½õϪ: LS-EPI+1 2016-09-01 14:13:27
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https://apps.webofknowledge.com/ ... age=1&doc=7 In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography ×÷Õß:Chen, X (Chen, Xiao)[ 1,2 ] ; Wang, YG (Wang, Yanguo)[ 2 ] ; Guo, J (Guo, Jie)[ 3 ] ; Jian, JK (Jian, Jikang)[ 3 ] ; Gu, L (Gu, Lin)[ 2,4 ] ; Zhang, ZH (Zhang, Zhihua)[ 1 ] PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL ¾í: 26 ÆÚ: 2 Ò³: 163-168 DOI: 10.1016/j.pnsc.2016.03.009 ³ö°æÄê: APR 2016 ²é¿´ÆÚ¿¯ÐÅÏ¢ PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL ³ö°æÉÌ ELSEVIER SCIENCE INC, 360 PARK AVE SOUTH, NEW YORK, NY 10010-1710 USA ISSN: 1002-0071 eISSN: 1745-5391 Ñо¿ÁìÓò Materials Science Science & Technology - Other Topics ÕªÒª In situ potential mapping of space charge (SC) layer in a single GaN nanowire (NW) contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between 68 nm and 91 nm, which correspond to the saturated SC layers at the GaN-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of GaN NWs was derived to be about 4.3*10(6) cm(-3). Our experiments demonstrate that in-situ electron holography under electric field can be a useful method to investigate SC layers and donor density in single NW and other heterostructures. (C) 2016 Chinese Materials Research Society. Production and hosting by Elsevier B.V. ¹Ø¼ü´Ê ×÷Õ߹ؼü´Ê:Space charge layer; Electron holography; In-situ TEM; Semiconductor nanowire; Semiconductor-metal contact KeyWords Plus:CAPACITANCE; DIODES; SCALE ×÷ÕßÐÅÏ¢ ͨѶ×÷ÕßµØÖ·: Zhang, ZH (ͨѶ×÷Õß) Dalian Jiaotong Univ, Liaoning Key Mat Lab Railway, Dalian 116028, Peoples R China. ÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ Dalian Jiaotong University ͨѶ×÷ÕßµØÖ·: Wang, YG (ͨѶ×÷Õß) Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. ÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ Chinese Academy of Sciences µØÖ·: [ 1 ] Dalian Jiaotong Univ, Liaoning Key Mat Lab Railway, Dalian 116028, Peoples R China ÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ Dalian Jiaotong University [ 2 ] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China ÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ Chinese Academy of Sciences [ 3 ] Xinjiang Univ, Sch Phys Sci & Technol, Urumqi 830046, Peoples R China ÔöÇ¿×éÖ¯ÐÅÏ¢µÄÃû³Æ Xinjiang University [ 4 ] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China µç×ÓÓʼþµØÖ·:ygwang@blcm.ac.cn; zhzhang@djtu.edu.cn »ù½ð×ÊÖúÖÂл »ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ Major State Basic Research Development Program of China 2014CB921002 2012CB921702 National Natural Science Foundation of China 11274365 51372027 51172193 Strategic Priority Research Program of the Chinese Academy of Sciences XDB07030200 ²é¿´»ù½ð×ÊÖúÐÅÏ¢¹Ø±Õ»ù½ð×ÊÖúÐÅÏ¢ This work is supported by the Major State Basic Research Development Program of China under Contract nos. 2014CB921002 and 2012CB921702, the National Natural Science Foundation of China (Grant nos. 11274365, 51372027 and 51172193), and the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant no. XDB07030200. ³ö°æÉÌ ELSEVIER SCIENCE INC, 360 PARK AVE SOUTH, NEW YORK, NY 10010-1710 USA Àà±ð / ·ÖÀà Ñо¿·½Ïò:Materials Science; Science & Technology - Other Topics Web of Science Àà±ð:Materials Science, Multidisciplinary; Multidisciplinary Sciences ÎÄÏ×ÐÅÏ¢ ÎÄÏ×ÀàÐÍ:Article ÓïÖÖ:English Èë²ØºÅ: WOS:000375607000007 ISSN: 1002-0071 eISSN: 1745-5391 ÆäËûÐÅÏ¢ IDS ºÅ: DL4LG Web of Science ºËÐĺϼ¯ÖÐµÄ "ÒýÓõIJο¼ÎÄÏ×": 18 Web of Science ºËÐĺϼ¯ÖÐµÄ "±»ÒýƵ´Î": 0 JCR® Àà±ð JCR ·ÖÇø MATERIALS SCIENCE, MULTIDISCIPLINARY Q2 Êý¾ÝÀ´×ÔµÚ 2015 °æ Journal Citation Reports® |
2Â¥2016-09-01 13:17:52
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