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为了降低大直径硅单晶生长过程中氧、碳的引入，对18英寸热系统进行改造，设计了改进型热系统，改变Ar的流向、加热器的尺寸，降低了硅单晶重的氧、碳含量，拉制晶体时间缩短，消耗功率降低，晶体质量提高，，得到了降低氧、碳含量的改进型热系统。 谢谢大家 ！ |
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zhaiwanjing
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vanhalen76(金币+1,VIP+0):thx 4-5 13:24
vanhalen76(金币+1,VIP+0):thx 4-5 13:24
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In order to reduce oxygen and carbon content in large diameter Czochralski Si single crystal (CZSi),we have modified the heat zone in 18 inches, designed a improving ithermal system to change the flow direction of AR and hotplate dimension , decreased oxygen and carbon content of Czochralski Si single crystal (CZSi),shorten the time of Pulled Crystals ，and the power consumption decreased and improved quality of Crystal ,finally a improving ithermal system with the lowest oxygen and carbon content obtained. [ Last edited by zhaiwanjing on 2008-9-20 at 10:29 ] |
2楼2008-09-19 22:15:00
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In an effort to control such undesired ingredient as oxygen and carbon when the Large-Diameter Silicon Monocrystal grows, an reconstruction associated with a 18-inche Heating System has been conducted , involving an improved thermal system and changes of the AR’s flow direction and of hotplate size. The updated system has proved its ability to decrease oxygen and carbon containing inside single crystal silicon and to spend less time in drawing crystal with less energy consumption and better crystal quality. 不好意思，刚发现有个地方（大直径硅单晶生长过程）漏翻了，现补上。 [ Last edited by xzfanhui on 2008-9-21 at 23:04 ] |
3楼2008-09-20 12:16:24
money4u
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4楼2008-09-20 21:07:04
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vanhalen76(金币+1,VIP+0):thx 4-5 13:24
vanhalen76(金币+1,VIP+0):thx 4-5 13:24
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可以负责任的讲，我的翻译比上面的都好 In order to reduce the contamination of O and C atoms during the growth of Large-Diameter Silicon Monocrystal, modifications were made in the 18-inche thermal System, including an improved heating system, the flow direction of Ar, and the size of the hotplate. Through these modifications, the O,C content in Silicon Monocrystal decreased, the time for crystal drawning was shortened and energy consumption was reduced. The quality of the Silicon Monocrystal obtained was improved, indicating that the modification on thermal system was successful. |
5楼2008-09-21 20:02:31