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[交流] Advances in Crystal Growth Research 电子书

IX
Contents
Preface v
Acknowledgements vii
Chapter 1 Crystal growth - Its significance for modem science and technology and its possible
future applications 1
I. Sunagawa
1. Introduction
2. Morphology and crystal growth
3. Synthesis of single crystals
4. Surface and interface
5. Lattice defects
6. Synthesis of dislocation-free crystals
7. Vapor growth and epitaxy
8. Computer simulation
9. Biomineralization and biocrystallization
10. Concluding remarks (future targets)
Part 1 Understanding of Fundamental Aspects in Crystal Growth
Chapter 2 Fundamentals of phase field theory 21
R.R Sekerka
1. Introduction
2. Monocomponent system
3. Anisotropy
4. Alloys
5. Hydrodynamics
6. Conclusions
Chapter 3 Generic mechanism of heterogeneous nucleation and molecular interfacial effect. . 42
Xiang-Yang Liu
1. Introduction
2. Nucleation barrier
3. Nucleation kinetics
4. Interfacial effects of foreign body and fluid molecules
5. Heterogeneous two-dimensional nucleation growth
6. General remarks and conclusions
X Contents
Chapter 4 Challenges in crystal growth science and the microgravity tool 62
A. Chernov
1. Opportunities
2. What is missing in crystal growth science?
3. Surface processes vs. bulk diffusion and convection.
Dendrites
4. Pattern formation
5. Ripening
6. Detached growth
7. Biomacromolecular crystallization
8. Conclusion
Chapter 5 Surface step dynamics: basic concepts, theory and simulation 78
M. Uwaha
1. Basic idea of step models
2. Step dynamics in a vicinal face
3. Relaxation of mesoscopic structures
Chapter 6 Surface step dynamics: experimental observations 100
J. Metois, J.C. Heyraud and J.M. Bermond
1. Introduction
2. Experimental
3. Equilibrium shape (macroscopic approach)
4. Thermal fluctuation of steps (microscopic approach)
5. Mechanism of mass transport for step fluctuation
6. Conclusion
Chapter 7 Elementary growth process in semiconductor epitaxy - Molecular beam epitaxy as
an example of epitaxy 110
T. Nishinaga
1. Introduction
2. Incorporation diffusion length
3. Intersurface diffusion
4. Elementary growth processes
5. Fabrication of microstructures
6. MicroChannel epitaxy by low angle incidence beam MBE
7. Elimination of the growth on (111) facet adjacent to (001) facet
8. Conclusions
Chapter 8 Atomistic simulation of epitaxial growth processes 129
T.Ito
1. Introduction
2. Computational methods
3. Role of electrons on the surface
Contents xi
4. Epitaxial growth simulation
5. Summary
Part 2 Materials Design and Functionality of Advanced Materials
Chapter 9 Si bulk crystal growth: what and how? 155
K. Kakimoto
1. Introduction
2. Magnetic field-applied crystal growth
3. Actual system
4. Summary
Chapter 10 Optimization of melt growth processes by experimental analysis and computer modeling
167
G. Miiller and B. Fischer
1. Introduction
2. Strategy of process optimization in crystal growth
3. Important features of industrial melt growth processes
4. Physico-chemical model
5. Numerical treatment
6. Verification of numerical models by model experiments
7. Process optimization
8. Conclusion
Chapter 11 Epitaxial lateral overgrowth of GaN 191
A. Usui and A. Sakai
1. Introduction
2. Growth procedure
3. ELO process
4. Dislocation behavior in FDELO-GaN
5. Characteristics of FIELO-GaN
6. Conclusion
Chapter 12 Effects of buffer layer and advanced technology on heteroepitaxy of GaN 210
K. Hiramatsu
1. Introduction
2. Metalorganic vapor phase epitaxy (MOVPE)
3. Hybrid vapor phase epitaxy (HVPE)
4. Summary
Chapter 13 Self-assembled quantum dots systems: the case of GaN 233
B. Daudin
1. Introduction
2. Growth mode of GaN
xii Contents
3. Kinetics of GaN growth
4. Emission properties of GaN QDs
5. Conclusion
Chapter 14 Self-organised growth of silicon nanocrystals in nanocrystalline-Si/Si02 superlattices
252
L. Tsybeskov and DJ. Lockwood
1. Introduction
2. Controlled crystallization of nanometer of thick a-Si layers; A novel
growth technique
3. Preparation and characterization
4. Vibrational properties
5. Photoluminescence
6. Carrier tunneling
7. Conclusion
Chapter 15 Growth and characterization of semiconductor silicon carbide for electronic and
optoelectronic applications: An industrial perspective 266
H.McD. Hobgood, M. Brady, W. Brixius, G. Fechko, R.C. Glass, D. Henshall, J.
Jenny, R. Leonard, D. Malta, St. G. Mueller, V. Tsvetkov, and C.H. Carter, Jr.
1. Introduction
2. SiC crystal growth
3. Crystallographic defects
4. Crystal purity
5. Summary
Chapter 16 Crystal growth of SiC II. Epitaxial growth 282
H. Matsunami and T. Kimoto
1. Introduction
2. Step-controlled epitaxy of SiC
3. Growth mechanism of step-controlled epitaxy
4. Step kinetics in SiC epitaxy
5. Characterization of epitaxial layers
6. In situ doping of impurities
7. Recent progress
8. Summary
Chapter 17 Crystal growth and characterization of magnetic semiconductors 303
Katsuaki Sato
1. Introduction
2. Magnetic semiconductors of the first generation
3. Il-VI-based diluted magnetic semiconductors
4. Ill-V-based diluted magnetic semiconductors
5. Ferromagnetic/semiconductor hybrids
Contents xiii
6. Chalcopyrite type magnetic semiconductors
7. ZnO-based magnetic semiconductors
8. Conclusion
Chapter 18 X-ray characterization of epitaxial layers 320
Y. Takeda and M. Tabuchi
1. Introduction
2. Lattice distortion and symmetric/asymmetric reflections
3. Atomic layer characterization by X-ray crystal truncation rod scattering
4. Conclusions
Chapter 19 Principles and applications of optical crystals; their stoichiometry study 337
S. Miyazawa
1. Introduction
2. What is the optical crystal?
3. Functions of optical crystals in appUcations
4. Basic study for the growth of optical crystals
5. Summary
Part 3 Dynamics of crystal-liquid interface
Chapter 20 Surface X-ray diffraction studies of crystal growth 351
Elias VHeg, Marianne Reedijk and Jelena Arsic
1. Introduction
2. Surface X-ray diffraction
3. Epitaxial growth
4. Solution growth
5. Conclusions
Chapter 21 Using atomic force microscopy to investigate solution crystal growth 361
James J. De Yoreo, Christine A. Orme and T.A. Land
1. Introduction
2. Design and operation of the AFM
3. Ex-situ experiments
4. In-situ experiments
5. Conclusions
Chapter 22 Crystal morphology control with tailor-made additives; A tereochemical approach. 381
I. Weissbuch, M.Lahav, L. Leiserowitz
1. Introduction
2. Crystal morphology engineering
3. Tailor-made inhibitors for resolution of racemates
4. Effect of tailor-made additives on growth of polar crystals
5. Effect of tailor-made additives on growth of centrosymmxiv Contents
6. Tailor made additives as enantioselective nucleation promoters
7. Control of crystalline phase formation
8. Conclusions
Chapter 23 Crystal engineering of biological soft materials 401
Kiyotaka Sato
1. Introduction
2. Key concepts in crystal engineering
3. Crystallization of amino acid in W/0 microemulsion
4. Template-accelerated solvent crystallization
5. Template-accelerated crystallization in OAV emulsion
6. Conclusionetric crystals

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