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Advances in Crystal Growth Research 电子书
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IX Contents Preface v Acknowledgements vii Chapter 1 Crystal growth - Its significance for modem science and technology and its possible future applications 1 I. Sunagawa 1. Introduction 2. Morphology and crystal growth 3. Synthesis of single crystals 4. Surface and interface 5. Lattice defects 6. Synthesis of dislocation-free crystals 7. Vapor growth and epitaxy 8. Computer simulation 9. Biomineralization and biocrystallization 10. Concluding remarks (future targets) Part 1 Understanding of Fundamental Aspects in Crystal Growth Chapter 2 Fundamentals of phase field theory 21 R.R Sekerka 1. Introduction 2. Monocomponent system 3. Anisotropy 4. Alloys 5. Hydrodynamics 6. Conclusions Chapter 3 Generic mechanism of heterogeneous nucleation and molecular interfacial effect. . 42 Xiang-Yang Liu 1. Introduction 2. Nucleation barrier 3. Nucleation kinetics 4. Interfacial effects of foreign body and fluid molecules 5. Heterogeneous two-dimensional nucleation growth 6. General remarks and conclusions X Contents Chapter 4 Challenges in crystal growth science and the microgravity tool 62 A. Chernov 1. Opportunities 2. What is missing in crystal growth science? 3. Surface processes vs. bulk diffusion and convection. Dendrites 4. Pattern formation 5. Ripening 6. Detached growth 7. Biomacromolecular crystallization 8. Conclusion Chapter 5 Surface step dynamics: basic concepts, theory and simulation 78 M. Uwaha 1. Basic idea of step models 2. Step dynamics in a vicinal face 3. Relaxation of mesoscopic structures Chapter 6 Surface step dynamics: experimental observations 100 J. Metois, J.C. Heyraud and J.M. Bermond 1. Introduction 2. Experimental 3. Equilibrium shape (macroscopic approach) 4. Thermal fluctuation of steps (microscopic approach) 5. Mechanism of mass transport for step fluctuation 6. Conclusion Chapter 7 Elementary growth process in semiconductor epitaxy - Molecular beam epitaxy as an example of epitaxy 110 T. Nishinaga 1. Introduction 2. Incorporation diffusion length 3. Intersurface diffusion 4. Elementary growth processes 5. Fabrication of microstructures 6. MicroChannel epitaxy by low angle incidence beam MBE 7. Elimination of the growth on (111) facet adjacent to (001) facet 8. Conclusions Chapter 8 Atomistic simulation of epitaxial growth processes 129 T.Ito 1. Introduction 2. Computational methods 3. Role of electrons on the surface Contents xi 4. Epitaxial growth simulation 5. Summary Part 2 Materials Design and Functionality of Advanced Materials Chapter 9 Si bulk crystal growth: what and how? 155 K. Kakimoto 1. Introduction 2. Magnetic field-applied crystal growth 3. Actual system 4. Summary Chapter 10 Optimization of melt growth processes by experimental analysis and computer modeling 167 G. Miiller and B. Fischer 1. Introduction 2. Strategy of process optimization in crystal growth 3. Important features of industrial melt growth processes 4. Physico-chemical model 5. Numerical treatment 6. Verification of numerical models by model experiments 7. Process optimization 8. Conclusion Chapter 11 Epitaxial lateral overgrowth of GaN 191 A. Usui and A. Sakai 1. Introduction 2. Growth procedure 3. ELO process 4. Dislocation behavior in FDELO-GaN 5. Characteristics of FIELO-GaN 6. Conclusion Chapter 12 Effects of buffer layer and advanced technology on heteroepitaxy of GaN 210 K. Hiramatsu 1. Introduction 2. Metalorganic vapor phase epitaxy (MOVPE) 3. Hybrid vapor phase epitaxy (HVPE) 4. Summary Chapter 13 Self-assembled quantum dots systems: the case of GaN 233 B. Daudin 1. Introduction 2. Growth mode of GaN xii Contents 3. Kinetics of GaN growth 4. Emission properties of GaN QDs 5. Conclusion Chapter 14 Self-organised growth of silicon nanocrystals in nanocrystalline-Si/Si02 superlattices 252 L. Tsybeskov and DJ. Lockwood 1. Introduction 2. Controlled crystallization of nanometer of thick a-Si layers; A novel growth technique 3. Preparation and characterization 4. Vibrational properties 5. Photoluminescence 6. Carrier tunneling 7. Conclusion Chapter 15 Growth and characterization of semiconductor silicon carbide for electronic and optoelectronic applications: An industrial perspective 266 H.McD. Hobgood, M. Brady, W. Brixius, G. Fechko, R.C. Glass, D. Henshall, J. Jenny, R. Leonard, D. Malta, St. G. Mueller, V. Tsvetkov, and C.H. Carter, Jr. 1. Introduction 2. SiC crystal growth 3. Crystallographic defects 4. Crystal purity 5. Summary Chapter 16 Crystal growth of SiC II. Epitaxial growth 282 H. Matsunami and T. Kimoto 1. Introduction 2. Step-controlled epitaxy of SiC 3. Growth mechanism of step-controlled epitaxy 4. Step kinetics in SiC epitaxy 5. Characterization of epitaxial layers 6. In situ doping of impurities 7. Recent progress 8. Summary Chapter 17 Crystal growth and characterization of magnetic semiconductors 303 Katsuaki Sato 1. Introduction 2. Magnetic semiconductors of the first generation 3. Il-VI-based diluted magnetic semiconductors 4. Ill-V-based diluted magnetic semiconductors 5. Ferromagnetic/semiconductor hybrids Contents xiii 6. Chalcopyrite type magnetic semiconductors 7. ZnO-based magnetic semiconductors 8. Conclusion Chapter 18 X-ray characterization of epitaxial layers 320 Y. Takeda and M. Tabuchi 1. Introduction 2. Lattice distortion and symmetric/asymmetric reflections 3. Atomic layer characterization by X-ray crystal truncation rod scattering 4. Conclusions Chapter 19 Principles and applications of optical crystals; their stoichiometry study 337 S. Miyazawa 1. Introduction 2. What is the optical crystal? 3. Functions of optical crystals in appUcations 4. Basic study for the growth of optical crystals 5. Summary Part 3 Dynamics of crystal-liquid interface Chapter 20 Surface X-ray diffraction studies of crystal growth 351 Elias VHeg, Marianne Reedijk and Jelena Arsic 1. Introduction 2. Surface X-ray diffraction 3. Epitaxial growth 4. Solution growth 5. Conclusions Chapter 21 Using atomic force microscopy to investigate solution crystal growth 361 James J. De Yoreo, Christine A. Orme and T.A. Land 1. Introduction 2. Design and operation of the AFM 3. Ex-situ experiments 4. In-situ experiments 5. Conclusions Chapter 22 Crystal morphology control with tailor-made additives; A tereochemical approach. 381 I. Weissbuch, M.Lahav, L. Leiserowitz 1. Introduction 2. Crystal morphology engineering 3. Tailor-made inhibitors for resolution of racemates 4. Effect of tailor-made additives on growth of polar crystals 5. Effect of tailor-made additives on growth of centrosymmxiv Contents 6. Tailor made additives as enantioselective nucleation promoters 7. Control of crystalline phase formation 8. Conclusions Chapter 23 Crystal engineering of biological soft materials 401 Kiyotaka Sato 1. Introduction 2. Key concepts in crystal engineering 3. Crystallization of amino acid in W/0 microemulsion 4. Template-accelerated solvent crystallization 5. Template-accelerated crystallization in OAV emulsion 6. Conclusionetric crystals http://home.imhb.cn/indexCF/home ... spx?MSAutoID=139552 好的话要支持 |
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