| 查看: 323 | 回复: 2 | ||||||||||
| 本帖产生 1 个 ，点击这里进行查看 | ||||||||||
[求助]
请帮忙查一下一篇文章的收录号
|
||||||||||
|
回复此楼» 猜你喜欢
售一区SCI文章T0P，我:8O.551.O54,科目全,可十急
已经有4人回复
-
售SCI文章，我:8O.5.5.1O.54,科目全,可十急
已经有5人回复
-
售SCI文章，我:8O5.5.1.O.54,科目齐全,可+急
已经有5人回复
-
售SCI文章，我:8O5.5.1.O.54,科目齐全,可+急
已经有6人回复
-
售SCI文章，我:8O.5.5.1O.54,科目全,可十急
已经有6人回复
-
售SCI一区T0P文章，我:8O.55.1.O.5.4,科目齐全,可+急
已经有5人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.5.4,科目全,可+急
已经有4人回复
-
售SCI一区T0P文章，我:8.O.55.1.O.5.4,科目全,可+急
已经有5人回复
-
售SCI一区文章，我:8O5.5.1.O5.4,科目全,可伽急
已经有5人回复
-
售SCI-T0P文章，我:8O.5.5.1.O.54,科目齐全,可+急
已经有4人回复
tangcwk
荣誉版主 (文坛精英)
-
专家经验: +373 - 应助: 236 (大学生)
- 贵宾: 13.252
- 金币: 323027
- 散金: 23008
- 红花: 947
- 沙发: 696
- 帖子: 40897
- 在线: 4614.3小时
- 虫号: 3046946
- 注册: 2014-03-13
- 专业: 高分子科学
- 管辖: 文献求助
【答案】应助回帖
★ ★ ★ ★ ★
感谢参与，应助指数 +1
duckyfu(sunshan4379代发): 金币+5 2015-08-03 13:09:17
sunshan4379: LS-EPI+1, 感谢应助 2015-08-03 13:09:31
感谢参与，应助指数 +1
duckyfu(sunshan4379代发): 金币+5 2015-08-03 13:09:17
sunshan4379: LS-EPI+1, 感谢应助 2015-08-03 13:09:31
|
第 1 条，共 1 条 标题: Reactivation of gallium nitride photocathode with cesium in a high vacuum system 作者: Fu, XQ (Fu, Xiaoqian); Zhang, JJ (Zhang, Junju) 来源出版物: OPTIK 卷: 124 期: 24 页: 7007-7009 DOI: 10.1016/j.ijleo.2013.07.004 出版年: 2013 Web of Science 核心合集中的 "被引频次": 1 被引频次合计: 1 引用的参考文献数: 14 摘要: The degradation and reactivation characteristics of the originally activated GaN photocathode are explored by testing the change of quantum efficiency (QE). The QE after degradation for 9 h can still keep more than 42% of the original value, which indicates GaN photocathode has more robust stability characteristic than GaAs photocathode. Although the possible residue is not cleared up before we perform the reactivation with cesium, the QEs are almost recovered. The restorations of both the band bending and the ideal Cs/O ratio on the surface, along with the double dipole model are proposed to explain the QE variation during the original activation, degradation and reactivation of the GaN photocathode. Further exploration should include the roles played by the achievement of the maximum band bending of the GaN surface when deposited with Cs and its relationship with the surface Mg doping concentration. (C) 2013 Elsevier GmbH. All rights reserved. 入藏号: WOS:000327685700113 语种: English 文献类型: Article 作者关键词: Gallium nitride; Photocathode; Quantum efficiency; Reactivation; Dipole model 地址: [Fu, Xiaoqian] Univ Jinan, Sch Informat Sci & Engn, Shandong Prov Key Lab Network Based Intelligent C, Jinan 250022, Peoples R China. [Fu, Xiaoqian; Zhang, Junju] Nanjing Univ Sci & Technol, Inst Elect Engn & Optoelect Technol, Nanjing 210094, Jiangsu, Peoples R China. 通讯作者地址: Fu, XQ (通讯作者),Univ Jinan, Sch Informat Sci & Engn, Shandong Prov Key Lab Network Based Intelligent C, Jinan 250022, Peoples R China. 电子邮件地址: ise_fuxq@ujn.edu.cn 出版商: ELSEVIER GMBH, URBAN & FISCHER VERLAG 出版商地址: OFFICE JENA, P O BOX 100537, 07705 JENA, GERMANY Web of Science 类别: Optics 研究方向: Optics IDS 号: 261SU ISSN: 0030-4026 29 字符的来源出版物名称缩写: OPTIK ISO 来源出版物缩写: Optik 来源出版物页码计数: 3 基金资助致谢: 基金资助机构 授权号 Natural Science Foundation of Shandong Province ZR2011FQ027 This work is supported by the Natural Science Foundation of Shandong Province (Grant No. ZR2011FQ027). |
2楼2015-07-28 08:31:50
tangcwk
荣誉版主 (文坛精英)
-
专家经验: +373 - 应助: 236 (大学生)
- 贵宾: 13.252
- 金币: 323027
- 散金: 23008
- 红花: 947
- 沙发: 696
- 帖子: 40897
- 在线: 4614.3小时
- 虫号: 3046946
- 注册: 2014-03-13
- 专业: 高分子科学
- 管辖: 文献求助
3楼2015-07-28 08:32:08
