[ÇóÖú] ͸Ã÷ÈáÐԵ缫×ÛÊöÖеĽðÊôÄÉÃ×Ïß²¿·Ö³öÏÖ¦ÇPÕâ¸ö·ûºÅ£¬ÊÇʲôÒâ˼

½ØÈ¡Ò»¶Î¡£¼Ó´ÖµÄ¦ÇP.¾¡Á¿½âÊÍÏêϸһЩ¡£¿ÉÒԵĻ°ÄܸæËßÎÒÄǸöOPVsÊÇʲôÂð£¿Ð»Ð» Several research groups have reported metal NW films with transmittance >85% and sheet resistance <20 ¦¸¨M¡õ [Figs. 10(a) and 10(b)], which are comparable with standard ITO electrodes, and explored them as TEs in organic optoelectronic devices.11,39,242 Since the first application in small molecule OPVs that had an ¦ÇP only <0.5%,the overall performance of metal NW-based devices has been steadily advancing. Generally, a buffer layer (e.g., PEDOTSS, ZnO, or TiOx) is required to flatten the surface of metal NW networks and to improve the contact with the active material so that they can serve as either anodes (collect/inject holes) or cathodes (collect/inject electrons) with proper buffer layers.237,243¨C245 For instance, Leem et al. fabricated P3HTCBM cells with Ag NWs to replace the bottom ITO TE. With PEDOTSS and TiOx as buffer layers, normal and inverted device architectures were achieved, respectively, which had comparable ¦ÇP of 2.0 and 3.5% compared to those of ITO-based reference cells.39 Gaynor et al. successfully fabricated ITO-free white OLEDs with Ag NWs/poly (methyl methacrylate) composites as TEs, which showed a luminous efficiency >30 lm¨MWand were close to that of the ITO-based devices (35.8 lm¨MW).246

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