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[求助]
透明柔性电极综述中的金属纳米线部分出现ηP这个符号，是什么意思
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截取一段。加粗的ηP.尽量解释详细一些。可以的话能告诉我那个OPVs是什么吗？谢谢 Several research groups have reported metal NW films with transmittance >85% and sheet resistance <20 Ω∕□ [Figs. 10(a) and 10(b)], which are comparable with standard ITO electrodes, and explored them as TEs in organic optoelectronic devices.11,39,242 Since the first application in small molecule OPVs that had an ηP only <0.5%,the overall performance of metal NW-based devices has been steadily advancing. Generally, a buffer layer (e.g., PEDOT  SS, ZnO, or TiOx) is required to flatten the surface of metal NW networks and to improve the contact with the active material so that they can serve as either anodes (collect/inject holes) or cathodes (collect/inject electrons) with proper buffer layers.237,243–245 For instance, Leem et al. fabricated P3HTCBM cells with Ag NWs to replace the bottom ITO TE. With PEDOTSS and TiOx as buffer layers, normal and inverted device architectures were achieved, respectively, which had comparable ηP of 2.0 and 3.5% compared to those of ITO-based reference cells.39 Gaynor et al. successfully fabricated ITO-free white OLEDs with Ag NWs/poly (methyl methacrylate) composites as TEs, which showed a luminous efficiency >30 lm∕Wand were close to that of the ITO-based devices (35.8 lm∕W).246 |
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