| 查看: 877 | 回复: 8 | ||||
| 本帖产生 1 个 ，点击这里进行查看 | ||||
mlg186金虫 (正式写手)
|
[求助]
谁帮我检索一篇文献，要求截屏或者转化成pdf文件，谢谢
|
|||
|
谁帮我检索一篇文献，要求截屏或者转化成pdf文件，谢谢 ZnO缓冲层上低温生长Al掺杂的ZnO薄膜 作者:MA Ligang; MA Shuyi; CHEN Haixia; HUANG Xinli https://lib.cqvip.com/QK/92397A/201108/38887392.html |
回复此楼» 猜你喜欢
现代”学阀”该如何界定
已经有14人回复
-
求合成方法
已经有8人回复
-
师弟论文见刊大半年才想起来申请专利，还能抢救一下吗？
已经有4人回复
-
上海工程技术大学 激光智能制造课题组 2027级博士研究生招生
已经有5人回复
-
课题组招2027级博士 上海工程技术大学 激光智能制造方向
已经有5人回复
-
有机合成以后会不会被AI改变？做科研的虫友怎么看
已经有8人回复
-
我的奶奶
已经有3人回复
sunshan4379
版主 (文坛精英)
- 应助: 218 (大学生)
- 贵宾: 7.08
- 金币: 129150
- 散金: 57852
- 红花: 419
- 沙发: 1036
- 帖子: 17124
- 在线: 4575.5小时
- 虫号: 2420830
- 注册: 2013-04-16
- 性别: GG
- 专业: 逻辑学
- 管辖: 检索知识
2楼2015-07-01 10:27:21
deserteagle9
金虫 (小有名气)
小学生
- 应助: 0 (幼儿园)
- 金币: 1074.4
- 散金: 5
- 帖子: 134
- 在线: 31.5小时
- 虫号: 3919520
- 注册: 2015-06-11
- 性别: GG
- 专业: 中医学其他科学问题
3楼2015-07-01 14:26:23
sunshan4379: 屏蔽内容, 本版禁止邮箱求助，请下次注意！ 2015-07-01 15:29:54
|
本帖内容被屏蔽 |
4楼2015-07-01 15:03:45
tangcwk
荣誉版主 (文坛精英)
-
专家经验: +373 - 应助: 236 (大学生)
- 贵宾: 13.252
- 金币: 323027
- 散金: 23008
- 红花: 947
- 沙发: 696
- 帖子: 40897
- 在线: 4614.3小时
- 虫号: 3046946
- 注册: 2014-03-13
- 专业: 高分子科学
- 管辖: 文献求助
5楼2015-07-01 19:53:00
感谢参与，应助指数 +1
心静_依然: 屏蔽内容, 本版是补全信息子版，禁止求助或者应助全文，请下次注意！ 2015-07-01 20:56:00
心静_依然: 应助指数-1, 违规应助 2015-07-01 21:15:46
心静_依然: 屏蔽内容, 本版是补全信息子版，禁止求助或者应助全文，请下次注意！ 2015-07-01 20:56:00
心静_依然: 应助指数-1, 违规应助 2015-07-01 21:15:46
|
本帖内容被屏蔽 |
6楼2015-07-01 20:39:35
|
EI |
7楼2015-07-01 21:43:57
tangcwk
荣誉版主 (文坛精英)
-
专家经验: +373 - 应助: 236 (大学生)
- 贵宾: 13.252
- 金币: 323027
- 散金: 23008
- 红花: 947
- 沙发: 696
- 帖子: 40897
- 在线: 4614.3小时
- 虫号: 3046946
- 注册: 2014-03-13
- 专业: 高分子科学
- 管辖: 文献求助
【答案】应助回帖
感谢参与，应助指数 +1
|
Accession number: 20114214445233 Title: Growth of Al doped ZnO thin films on ZnO buffer layer at low temperature Authors: Ma, Li-Gang1; Ma, Shu-Yi1, 2; Chen, Hai-Xia1; Huang, Xin-Li1 Author affiliation: 1 College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China 2 Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Lanzhou 730070, China Corresponding author: Ma, S.-Y. Source title: Gongneng Cailiao/Journal of Functional Materials Abbreviated source title: Gongneng Cailiao Volume: 42 Issue: 8 Issue date: August 2011 Publication year: 2011 Pages: 1516-1519 Language: Chinese ISSN: 10019731 CODEN: GOCAEA Document type: Journal article (JA) Publisher: Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China Abstract: The Al-doped ZnO (AZO) thin films with different Al contents were deposited on ZnO buffer layer by reactive RF magnetron sputtering technology.The microstructure, surface morphology, luminescence properties of the AZO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM)and photoluminescence (PL) spectrum, respectively.The results revealed that the preferred orientation of ZnO films became with increasing Al doping concentration.And as Al doping concentration was 0.81at% the ratio of intensity of (002) to other peaks attained maximum, which indicated that appropriate Al-doping can improve the preferred orientation of ZnO films.The average transmittance was above 70%in the visible range.Two blue peaks located at 444nm (2.80eV) and 483nm (2.57eV) and weak green peak located at about 521nm (2.38eV) were observed from the PL spectra of the four samples and the mechanism of luminescence was discussed. Number of references: 13 Main heading: Aluminum Controlled terms: Buffer layers - Magnetron sputtering - Metallic films - Optical films - Photoluminescence - Scanning electron microscopy - Semiconductor doping - Thin films - X ray diffraction - Zinc oxide Uncontrolled terms: Al content - Al doped ZnO thin films - Al-doped ZnO - Al-doping - AZO thin films - Low temperatures - Luminescence properties - Photoluminescence spectrum - PL spectra - Preferred orientations - rf-Magnetron sputtering - XRD - ZnO - ZnO buffer layer - ZnO films Classification code: 931.3 Atomic and Molecular Physics - 804.2 Inorganic Compounds - 741.3 Optical Devices and Systems - 741.1 Light/Optics - 933.1 Crystalline Solids - 714.2 Semiconductor Devices and Integrated Circuits - 539.3 Metal Plating - 539 Metals Corrosion and Protection; Metal Plating - 531 Metallurgy and Metallography - 541.1 Aluminum Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. |
8楼2015-07-01 21:46:49
tangcwk
荣誉版主 (文坛精英)
-
专家经验: +373 - 应助: 236 (大学生)
- 贵宾: 13.252
- 金币: 323027
- 散金: 23008
- 红花: 947
- 沙发: 696
- 帖子: 40897
- 在线: 4614.3小时
- 虫号: 3046946
- 注册: 2014-03-13
- 专业: 高分子科学
- 管辖: 文献求助
【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★
mlg186: 金币+10 2015-07-02 16:32:10
心静_依然: LS-EPI+1, 感谢应助 2015-07-02 16:59:22
mlg186: 金币+10 2015-07-02 16:32:10
心静_依然: LS-EPI+1, 感谢应助 2015-07-02 16:59:22
 还要截图 QQ图片20150701214706.png |
9楼2015-07-01 21:48:54