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mlg186金虫 (正式写手)
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[求助]
谁帮我检索一篇文献，要求截屏或者转化成pdf文件，谢谢
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谁帮我检索一篇文献，要求截屏或者转化成pdf文件，谢谢 ZnO缓冲层上低温生长Al掺杂的ZnO薄膜 作者:MA Ligang; MA Shuyi; CHEN Haixia; HUANG Xinli https://lib.cqvip.com/QK/92397A/201108/38887392.html |
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sunshan4379
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2楼2015-07-01 10:27:21
deserteagle9
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3楼2015-07-01 14:26:23
sunshan4379: 屏蔽内容, 本版禁止邮箱求助，请下次注意！ 2015-07-01 15:29:54
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tangcwk
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5楼2015-07-01 19:53:00
感谢参与，应助指数 +1
心静_依然: 屏蔽内容, 本版是补全信息子版，禁止求助或者应助全文，请下次注意！ 2015-07-01 20:56:00
心静_依然: 应助指数-1, 违规应助 2015-07-01 21:15:46
心静_依然: 屏蔽内容, 本版是补全信息子版，禁止求助或者应助全文，请下次注意！ 2015-07-01 20:56:00
心静_依然: 应助指数-1, 违规应助 2015-07-01 21:15:46
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6楼2015-07-01 20:39:35
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7楼2015-07-01 21:43:57
tangcwk
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Accession number: 20114214445233 Title: Growth of Al doped ZnO thin films on ZnO buffer layer at low temperature Authors: Ma, Li-Gang1; Ma, Shu-Yi1, 2; Chen, Hai-Xia1; Huang, Xin-Li1 Author affiliation: 1 College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China 2 Key Laboratory of Atomic and Molecular Physics and Functional Materials of Gansu Province, Lanzhou 730070, China Corresponding author: Ma, S.-Y. Source title: Gongneng Cailiao/Journal of Functional Materials Abbreviated source title: Gongneng Cailiao Volume: 42 Issue: 8 Issue date: August 2011 Publication year: 2011 Pages: 1516-1519 Language: Chinese ISSN: 10019731 CODEN: GOCAEA Document type: Journal article (JA) Publisher: Journal of Functional Materials, P.O. Box 1512, Chongqing, 630700, China Abstract: The Al-doped ZnO (AZO) thin films with different Al contents were deposited on ZnO buffer layer by reactive RF magnetron sputtering technology.The microstructure, surface morphology, luminescence properties of the AZO thin films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM)and photoluminescence (PL) spectrum, respectively.The results revealed that the preferred orientation of ZnO films became with increasing Al doping concentration.And as Al doping concentration was 0.81at% the ratio of intensity of (002) to other peaks attained maximum, which indicated that appropriate Al-doping can improve the preferred orientation of ZnO films.The average transmittance was above 70%in the visible range.Two blue peaks located at 444nm (2.80eV) and 483nm (2.57eV) and weak green peak located at about 521nm (2.38eV) were observed from the PL spectra of the four samples and the mechanism of luminescence was discussed. Number of references: 13 Main heading: Aluminum Controlled terms: Buffer layers - Magnetron sputtering - Metallic films - Optical films - Photoluminescence - Scanning electron microscopy - Semiconductor doping - Thin films - X ray diffraction - Zinc oxide Uncontrolled terms: Al content - Al doped ZnO thin films - Al-doped ZnO - Al-doping - AZO thin films - Low temperatures - Luminescence properties - Photoluminescence spectrum - PL spectra - Preferred orientations - rf-Magnetron sputtering - XRD - ZnO - ZnO buffer layer - ZnO films Classification code: 931.3 Atomic and Molecular Physics - 804.2 Inorganic Compounds - 741.3 Optical Devices and Systems - 741.1 Light/Optics - 933.1 Crystalline Solids - 714.2 Semiconductor Devices and Integrated Circuits - 539.3 Metal Plating - 539 Metals Corrosion and Protection; Metal Plating - 531 Metallurgy and Metallography - 541.1 Aluminum Database: Compendex Compilation and indexing terms, © 2015 Elsevier Inc. |
8楼2015-07-01 21:46:49
tangcwk
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mlg186: 金币+10 2015-07-02 16:32:10
心静_依然: LS-EPI+1, 感谢应助 2015-07-02 16:59:22
mlg186: 金币+10 2015-07-02 16:32:10
心静_依然: LS-EPI+1, 感谢应助 2015-07-02 16:59:22
 还要截图 QQ图片20150701214706.png |
9楼2015-07-01 21:48:54