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niudongli金虫 (小有名气)
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[求助]
求2篇文章的SCI检索号 已有1人参与
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1. Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2 Solar Energy Thin Film 期刊名：Journal of The Electrochemical Society， 2014年161卷 第6期。 2. Preparation of Cu(In,Ga)S2 Absorber Layers for Thin Film Solar Cell by Annealing of Electrodeposited Cu-Ga-S Precursor Layers 期刊名：：Journal of The Electrochemical Society， 2014年161卷 第14期。 |
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小凡下山
铁杆木虫 (著名写手)
- 应助: 158 (高中生)
- 金币: 5026.1
- 散金: 1000
- 红花: 26
- 帖子: 2321
- 在线: 7413.5小时
- 虫号: 3123127
- 注册: 2014-04-09
- 性别: GG
- 专业: 运筹与管理
【答案】应助回帖
感谢参与，应助指数 +1
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Electrodeposition of Cu-Ga Precursor Layer from Deep Eutectic Solvent for CuGaS2 Solar Energy Thin Film 作者:Niu, GH (Niu, Guanghai)[ 1,2,3 ] ; Yang, S (Yang, Sui)[ 1,2,3 ] ; Li, HX (Li, Hongxing)[ 1,2,3 ] ; Yi, J (Yi, Jie)[ 4 ] ; Wang, MH (Wang, Minghao)[ 1,2,3 ] ; Lv, XX (Lv, Xinxin)[ 1,2,3 ] ; Zhong, JX (Zhong, Jianxin)[ 1,2,3 ] JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 161 期: 6 页: D333-D338 DOI: 10.1149/2.050406jes 出版年: 2014 查看期刊信息 摘要 CuGaS2 solar energy thin film is fabricated with electrochemical deposition of precursor from deep eutectic solvent (DES) based on choline chloride and urea (commercially known as Reline) to eliminate the interference of hydrogen evolution reaction (HER). The process involves electrodeposition of Cu-Ga precursor on molybdenum substrate from Reline and subsequential annealing in sulfur vapor. The formation of CuGa2 alloy in precursor is observed and pure ternary chalcopyrite CuGaS2 phase in good polycrystalline structure without secondary phase is obtained after thermal treatment. The influence of applied deposition potential on the crystalline phase, morphology, compositions and carrier concentration of the films were investigated. The Cu/Ga ratio decreases with decreasing the deposition potential benefiting the formation of a pure crystallized CuGaS2 thin film. A relative positive deposition potential results in a larger crystalline size benefitting the photoelectrical conversion. Impedance spectroscopy test demonstrates the semiconductor property of the synthesized CuGaS2 polycrystalline thin film is p-type and the carrier concentration increases with negative shift of deposition potential. (C) 2014 The Electrochemical Society. All rights reserved. 关键词 KeyWords Plus:OPTICAL-PROPERTIES; CHOLINE CHLORIDE; GROWTH; MORPHOLOGY; SI(111) 作者信息 通讯作者地址: Niu, GH (通讯作者) Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China. 地址: [ 1 ] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China [ 2 ] Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China [ 3 ] Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China [ 4 ] Xiangtan Univ, Coll Chem, Xiangtan 411105, Hunan, Peoples R China 电子邮件地址:syang@xtu.edu.cn 基金资助致谢 基金资助机构 授权号 National Nature Science Foundation 51102203 51172191 51202208 National Basic Research Program of China 2012CB921303 Open Fund based on the innovation platform of Hunan colleges and universities 11K061 Hunan Provincial Natural Science Foundation of China 10JJ2003 查看基金资助信息 出版商 ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA 类别 / 分类 研究方向:Electrochemistry; Materials Science Web of Science 类别:Electrochemistry; Materials Science, Coatings & Films 文献信息 文献类型:Article 语种:English 入藏号: WOS:000339508600077 ISSN: 0013-4651 eISSN: 1945-7111 期刊信息 Impact Factor (影响因子): Journal Citation Reports® 其他信息 IDS 号: AM0BV Web of Science 核心合集中的 "引用的参考文献": 32 Web of Science 核心合集中的 "被引频次": 1 引文网络 1 被引频次 32 引用的参考文献 查看 Related Records 查看引证关系图查看引证关系图 当有人引用此记录时接收电子邮件创建引文跟踪 (数据来自 Web of ScienceTM 核心合集) 全部被引频次计数 1 / 所有数据库 1 / Web of Science 核心合集 0 / BIOSIS Citation Index 0 / 中国科学引文数据库 0 / Data Citation Index 0 / SciELO Citation Index 最近的引文 Liu, S. GROWTH, STRUCTURE AND OPTICAL CHARACTERIZATION OF CuGaS2 THIN FILMS OBTAINED BY SPRAY PYROLYSIS. CHALCOGENIDE LETTERS, MAR 2015. |
2楼2015-04-27 15:02:51
小凡下山
铁杆木虫 (著名写手)
- 应助: 158 (高中生)
- 金币: 5026.1
- 散金: 1000
- 红花: 26
- 帖子: 2321
- 在线: 7413.5小时
- 虫号: 3123127
- 注册: 2014-04-09
- 性别: GG
- 专业: 运筹与管理
3楼2015-04-27 15:03:30
小凡下山
铁杆木虫 (著名写手)
- 应助: 158 (高中生)
- 金币: 5026.1
- 散金: 1000
- 红花: 26
- 帖子: 2321
- 在线: 7413.5小时
- 虫号: 3123127
- 注册: 2014-04-09
- 性别: GG
- 专业: 运筹与管理
【答案】应助回帖
|
Preparation of Cu(In,Ga)S-2 Absorber Layers for Thin Film Solar Cell by Annealing of Electrodeposited Cu-Ga-S Precursor Layers 作者:Yang, S (Yang, Sui)[ 1,2,3 ] ; Niu, GH (Niu, Guanghai)[ 1,2,3 ] ; Wang, MH (Wang, Minghao)[ 1,2,3 ] ; Li, MW (Li, Mingwei)[ 1,2,3 ] ; Li, HX (Li, Hongxing)[ 1,2,3 ] ; Yi, J (Yi, Jie)[ 4 ] ; Zhong, JX (Zhong, Jianxin)[ 1,2,3 ] JOURNAL OF THE ELECTROCHEMICAL SOCIETY 卷: 161 期: 14 页: D813-D819 DOI: 10.1149/2.0851414jes 出版年: 2014 查看期刊信息 摘要 Cu(In,Ga)S-2 (CIGS) thin film was synthesized on ITO glass substrate via electrodeposition of Cu-Ga-S precursor layer followed by thermal annealing treatment. Our results show that annealing temperature played an important role on the formation of CIGS crystallites. The pure quaternary chalcopyrite CIGS crystal phase in good crystallization with an uniform and compact surface morphology was reproducibly achieved after sintering at 400 degrees C. The metallic In atom diffused from the ITO substrate was found to incorporate to the Cu-Ga-S precursor film and allow the conversion of the quaternary chalcopyrite structure. Several characterization methods including X-ray diffraction (XRD), scanning electron microscope (SEM), energy diffraction spectrum (EDS) and high-resolution transmission electron microscopy (HRTEM) certified the incorporation of In. A possible growth mechanism for explaining the formation of CIGS thin films is proposed and briefly discussed. Completed CIGS solar cell device achieved a 5.75% total area power conversion efficiency under a simulated AM 1.5 illumination. (C) 2014 The Electrochemical Society. All rights reserved. 关键词 KeyWords Plus:ELECTRICAL-PROPERTIES; BAND-GAP; CUINS2; DEPOSITION; GROWTH; POLYCRYSTALLINE; NANOCRYSTALS; CRYSTALS 作者信息 通讯作者地址: Yang, S (通讯作者) Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China. 地址: [ 1 ] Xiangtan Univ, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China [ 2 ] Xiangtan Univ, Lab Quantum Engn & Micronano Energy Technol, Xiangtan 411105, Hunan, Peoples R China [ 3 ] Xiangtan Univ, Fac Mat & Optoelect Phys, Xiangtan 411105, Hunan, Peoples R China [ 4 ] Xiangtan Univ, Coll Chem, Xiangtan 411105, Hunan, Peoples R China 电子邮件地址:syang@xtu.edu.cn 基金资助致谢 基金资助机构 授权号 National Nature Science Foundation 51102203 51172191 51202208 National Basic Research Program of China 2012CB921303 Program for Changjiang Scholars and Innovative Research Team in University IRT13093 查看基金资助信息 出版商 ELECTROCHEMICAL SOC INC, 65 SOUTH MAIN STREET, PENNINGTON, NJ 08534 USA 类别 / 分类 研究方向:Electrochemistry; Materials Science Web of Science 类别:Electrochemistry; Materials Science, Coatings & Films 文献信息 文献类型:Article 语种:English 入藏号: WOS:000345975500075 ISSN: 0013-4651 eISSN: 1945-7111 期刊信息 Impact Factor (影响因子): Journal Citation Reports® 其他信息 IDS 号: AW0IO Web of Science 核心合集中的 "引用的参考文献": 44 Web of Science 核心合集中的 "被引频次": 0 |
4楼2015-04-27 15:06:01
小凡下山
铁杆木虫 (著名写手)
- 应助: 158 (高中生)
- 金币: 5026.1
- 散金: 1000
- 红花: 26
- 帖子: 2321
- 在线: 7413.5小时
- 虫号: 3123127
- 注册: 2014-04-09
- 性别: GG
- 专业: 运筹与管理
5楼2015-04-27 15:06:25
