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SnO2 thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015e0.815 (U-cm)L1 as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants ( 3o, 3N) values were calculated by using the optical band gap values as a function of the film thickness. |
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- 翻译EPI: 6
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连续离子层吸附反应法(SILAR)制备SnO2薄膜及其特性研究 摘要： 室温下，利用SILAR法将SnO2薄膜沉积在玻璃基板上，研究膜厚对特性参数如：结构、形态、光学和电学性质的影响。膜在氧气氛围（400°C,30min）中退火，同时研究膜的特性参数。X射线衍射和扫描电子显微镜（SEM）研究表明所有的膜呈现天然多晶四方体结构，并且很好的覆盖在玻璃基板上。研究了膜的晶体和表面性质后发现它们随膜厚度增加而提高。随着膜厚度由215-490nm增加，光学带隙从3.90ev提升到3.54ev,电导率在0.015-0.815（Ω.cm）-1间变化。通过使用光学带隙值计算折光率和高频介电常数（ε0，ε∞）值作为膜厚度的一个函数。 [ 发自手机版 https://muchong.com/3g ] |
2楼2015-03-11 22:45:27