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Enwei Sun, Wenwu Cao
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Relaxor-based ferroelectric single crystals: growth, domain engineering, characterization and applications
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Progress in Materials Science
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August 2014
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Volume 65
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Pages 124¨C210
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In the past decade, domain engineered relaxor-PT ferroelectric single crystals, including (1  x)Pb(Mg1/3Nb2/3)O3¨CxPbTiO3 (PMN¨CPT), (1  x)Pb(Zn1/3Nb2/3)O3¨CxPbTiO3 (PZN¨CPT) and (1  x  y)Pb(In1/2Nb1/2)O3¨CyPb(Mg1/3Nb2/3)O3¨CxPbTiO3 (PIN¨CPMN¨CPT), with compositions near the morphotropic phase boundary (MPB) have triggered a revolution in electromechanical devices owing to their giant piezoelectric properties and ultra-high electromechanical coupling factors. Compared to traditional PbZr1³`…¸—µí¸?«3 (PZT) ceramics, the piezoelectric coefficient d33 is increased by a factor of 5 and the electromechanical coupling factor k33 is increased from <70% to >90%. Many emerging rich physical phenomena, such as charged domain walls, multi-phase coexistence, and domain pattern symmetries, have posed challenging fundamental questions for scientists. The superior electromechanical properties of these domain engineered single crystals have prompted the design of a new generation electromechanical devices, including sensors, transducers, actuators and other electromechanical devices, with greatly improved performance. It took less than 7 years from the discovery of larger size PMN¨CPT single crystals to the commercial production of the high-end ultrasonic imaging probe ¡°PureWave¡±. The speed of development is unprecedented, and the research collaboration between academia and industrial engineers on this topic is truly intriguing. It is also exciting to see that these relaxor-PT single crystals are being used to replace traditional PZT piezoceramics in many new fields outside of medical imaging. The new ternary PIN¨CPMN¨CPT single crystals, particularly the ones with Mn-doping, have laid a solid foundation for innovations in high power acoustic projectors and ultrasonic motors, hinting another revolution in underwater SONARs and miniature actuation devices. This article intends to provide a comprehensive review on the development of relaxor-PT single crystals, spanning material discovery, crystal growth techniques, domain engineering concept, and full-matrix property characterization all the way to device innovations. It outlines a truly encouraging story in materials science in the modern era. All key references are provided and 30 complete sets of material parameters for different types of relaxor-PT single crystals are listed in Appendix A. It is the intension of this review article to serve as a resource for those who are interested in basic research and practical applications of these relaxor-PT single crystals. In addition, possible mechanisms of giant piezoelectric properties in these domain-engineered relaxor-PT systems will be discussed based on contributions from polarization rotation and charged domain walls.

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