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在线: 32.4小时
虫号: 3290608
注册: 2014-06-24
性别: MM
专业: 碳素材料与超硬材料

[交流] 碳纳米管薄膜的电热卤化反应

Electrothermal halogenation of carbon nanotube ﬁlms
摘要：We report an innovative approach to halogenation of carbon nanotube (CNT) ﬁlms.Application of bias voltage across horizontally aligned CNT films resulted in the electrothermal effect, which enabled us to chemically modify CNT ﬁlms at the entirely controlled range of temperatures up to 300 ℃. Such heated CNT membranes were exposed to gaseous halogens (Cl2,Br2,I2) whilst their electrical properties were monitored. The experiments were carried out at room temperature and 100–300℃(in 50℃ steps) until no further change, in electrical resistance could be seen. The procedure lasted less than one minute, during which we were able to successfully introduce up to 6.7%, 6.0% and 1.5% at. of Cl, Br and I into the CNT framework. In parallel, we observed a permanent increase in conductivity of the ﬁlms and mild puriﬁcation of the starting material due to the removal of various carbon–oxygen functional groups.
中文翻译摘要：报道了一种新的方法卤化碳纳米管（CNT）薄膜。偏压穿过CNT薄膜的应用导致电热反应，使得我们能够用化学的方法改性碳纳米管薄膜在完全可控的温度范围直到300℃。这种加热的CNT薄膜与卤素气体（Cl2，Br2，I2）接触，同时检测它们的电学性能。实验在室温和100-300℃下进行直至观察不到电阻的变化。这个过程持续不到一分钟，在这个过程中我们可以顺利的引入6.7%，6.0%和1.5%的Cl，Br和I到CNT结构中。同时，观察到薄膜导电参数的提高以及起始原料的略微纯化因为多种碳-氧功能基的除去。
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