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cl6860

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2013年机电一体化与信息技术(ICMIT 2013)桂林   Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing
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Accession number:       
20140117159677
        Title:        Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing
        Authors:         Chen, Liang1 Email author 30750574@163.com; Hu, Cheng Zhong1; Jiang, Chun Ling1
        Author affiliation:        1 College of Physics and Electronic Engineering, TaiShan University, TaiAn, China
        Source title:        Applied Mechanics and Materials
        Abbreviated source title:        Appl. Mech. Mater.
        Volume:        462-463
        Monograph title:        Progress in Mechatronics and Information Technology
        Issue date:        2014
        Publication year:        2014
        Pages:        592-596
        Language:        English
        ISSN:         16609336
        E-ISSN:         16627482
        ISBN-13:         9783037859414
        Document type:        Conference article (CA)
        Conference name:        2013 International Conference on Mechatronics and Information Technology, ICMIT 2013
        Conference date:        October 19, 2013 - October 20, 2013
        Conference location:        Guilin, China
        Conference code:         101728
        Sponsor:        Korea Maritime University; Inha University; Hong Kong Industrial Technology Research Centre
        Publisher:        Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland
        Abstract:        A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced. © (2014) Trans Tech Publications, Switzerland.
        Number of references:        13
        Main heading:         Heterojunction bipolar transistors
        Controlled terms:         Heat resistance  -  Information technology  -  Temperature distribution  -  Thermoanalysis  -  Thermodynamic stability
        Uncontrolled terms:         ANSYS software  -  Emitter fingers  -  Emitter structures  -  Junction temperatures  -  Non-uniform  -  Novel structures  -  SiGe heterojunction bipolar transistor  -  Thermal simulations
        Classification code:         641.1 Thermodynamics -  714.2 Semiconductor Devices and Integrated Circuits -  801 Chemistry -  903 Information Science -  931.2 Physical Properties of Gases, Liquids and Solids
        DOI:        10.4028/www.scientific.net/AMM.462-463.592
        Database:        Compendex
                Compilation and indexing terms, © 2013 Elsevier Inc.
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