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cl6860金虫 (初入文坛)
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[求助]
AMM 麻烦查一下这篇文章检索了吗？谢谢 已有1人参与
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| 2013年机电一体化与信息技术（ICMIT 2013）桂林 Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing |
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【答案】应助回帖
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cl6860: 金币+5, ★★★★★最佳答案, 感谢 2014-02-02 10:00:50
cl6860: 金币+5, ★★★★★最佳答案, 感谢 2014-02-02 10:00:50
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Accession number: 20140117159677 Title: Design and thermal analysis of SiGe HBT with segmented emitter fingers and non-uniform emitter finger spacing Authors: Chen, Liang1 Email author 30750574@163.com; Hu, Cheng Zhong1; Jiang, Chun Ling1 Author affiliation: 1 College of Physics and Electronic Engineering, TaiShan University, TaiAn, China Source title: Applied Mechanics and Materials Abbreviated source title: Appl. Mech. Mater. Volume: 462-463 Monograph title: Progress in Mechatronics and Information Technology Issue date: 2014 Publication year: 2014 Pages: 592-596 Language: English ISSN: 16609336 E-ISSN: 16627482 ISBN-13: 9783037859414 Document type: Conference article (CA) Conference name: 2013 International Conference on Mechatronics and Information Technology, ICMIT 2013 Conference date: October 19, 2013 - October 20, 2013 Conference location: Guilin, China Conference code: 101728 Sponsor: Korea Maritime University; Inha University; Hong Kong Industrial Technology Research Centre Publisher: Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland Abstract: A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and non-uniform emitter finger spacing was proposed to improve the thermal stability. Thermal simulation for a five-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 429.025K to 414.252K, the thermal resistance reduce from 159K/W to 141K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced. © (2014) Trans Tech Publications, Switzerland. Number of references: 13 Main heading: Heterojunction bipolar transistors Controlled terms: Heat resistance - Information technology - Temperature distribution - Thermoanalysis - Thermodynamic stability Uncontrolled terms: ANSYS software - Emitter fingers - Emitter structures - Junction temperatures - Non-uniform - Novel structures - SiGe heterojunction bipolar transistor - Thermal simulations Classification code: 641.1 Thermodynamics - 714.2 Semiconductor Devices and Integrated Circuits - 801 Chemistry - 903 Information Science - 931.2 Physical Properties of Gases, Liquids and Solids DOI: 10.4028/www.scientific.net/AMM.462-463.592 Database: Compendex Compilation and indexing terms, © 2013 Elsevier Inc. |
2楼2014-02-02 08:42:40
