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In conclusion, the solution-processed fabrication of a molecular monolayer-based nonvolatile memory fl exible device on a plastic substrate was successfully accomplished. We found that an rGO soft-contact top electrode can play an important role in the conformational-change-dependent conductance-switching process of an ABC10 SAM. Voltage-controlled trans–cis isomerizations of ABC10 molecules in a SAM were applied to an rGO/ ABC10 SAM/rGO device, which showed stable nonvolatile memory operations. |
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