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Çë´ó¼Ò¿´¿´Õâ¶ÎÎÄ×Ö£¬Õª×Ô£¨J. Phys. Chem. 1996, 100, 13061-13078£©£¬ÔÚ¸ÃÂÛÎÄ£¨¼û¸½¼þ£©µÄµÚ13067Ò³µÄµÚÈý¶Î¡£¸Ã¶Î»°ËµÓÉÓڶԵ缫½ðÊôµç¼«·ÑÃ×Äܼ¶µÍÓÚH+/H2µÄ±ê×¼µç¼«µç룬Òò´Ë²»¿ÉÄÜ»¹Ô­ÇâÀë×Ó£¬Õâ¶ÎÎÄ×ÖÌá³öµÄÒ»ÖÖ½â¾ö·½·¨ÊǸø¹¤×÷µç¼«Ê©¼ÓÒ»¸öÑô¼«Æ«Ñ¹£¬ÕâÑù×ö¾Í¿ÉÒÔ̧¸ß½ðÊôµç¼«µÄ·ÑÃ×Äܼ¶´Ó¶ø¿ÉÒÔ»¹Ô­ÇâÀë×ÓÁË¡£ÎÒ¶ÔËûÌá³öµÄÕâÖÖ·½·¨²»Àí½â£¬ÓÐÄÄλ´óÏÀ¿ÉÒÔ¸ø½âÊÍһϣ¬Ð»Ð»£¡
Under illumination (Figure 9), the Fermi level in the semiconductor bulk rises toward Ufb. With the two electrodes shorted together, the maximum Fermi level possible in the cell is the flat-band potential. In Figure 9, Ufb is below the H+/H2 redox potential. Hence, even with illumination intensity sufficient to completely flatten the semiconductor bands, H2 cannot be evolved at the counter electrode because the Fermi level is below the H+/H2 potential. To raise the Fermi level in the metal counter electrode above the H+/H2 potential, an external anodic bias, Eb, must be applied, as shown in Figure 9. This bias also provides the overvoltage at the metal cathode, ¨¨e, required to sustain the current flow, and it increases the band bending in the semiconductor to maintain the required charge-separation rate.
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