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lhxxuevasp银虫 (初入文坛)
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[求助]
求助两篇文章的SCI收录检索，谢谢~
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题目: First-Principles Study of the Electronic Properties of B/N Atom Doped Silicene Nanoribbons 期刊: The Journal of Physical Chemistry C 卷期号: 117 (26） 页码: 13620–13626 作者: Hang-Xing Luan , Chang-Wen Zhang , Fu-Bao Zheng , and Pei-Ji Wang 题目: Novel electronic and magnetic properties in AlN nanoribbons: First-principles prediction 期刊: Europhysics Letters 卷期号: 103 (3） 页码: 37009 作者: Hang-Xing Luan, Chang-Wen Zhang1 and Shi-Shen Yan |
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baiyuefei
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1. http://apps.webofknowledge.com/f ... age=1&doc=1 First-Principles Study of the Electronic Properties of B/N Atom Doped Silicene Nanoribbons 作者: Luan, HX (Luan, Hang-Xing)[ 1 ] ; Zhang, CW (Zhang, Chang-Wen)[ 1 ] ; Zheng, FB (Zheng, Fu-Bao)[ 1 ] ; Wang, PJ (Wang, Pei-Ji)[ 1 ] 来源出版物: JOURNAL OF PHYSICAL CHEMISTRY C 卷:117 期:26 页:13620-13626 DOI:10.1021/jp4005357 出版年:JUL 4 2013 被引频次: 0 (来自 Web of Science) 引用的参考文献: 37 [ 查看 Related Records ] 引证关系图 摘要: On the basis of first-principles calculations, we study the geometric, electronic, and magnetic properties of silicene nanoribbons (SiNRs) doped by the boron/nitrogen (B/N) bonded pair at different sites. Total energies analysis indicate that the B/N pair tends to be doped at the edge of SiNRs and that the B/N pair doping in the armchair SiNRs (ASiNRs) is easier to carry out than the unbonded B/N pair doping in ASiNRs. Different from the metallic states associated with the singly substituted N or B atom at the edge in ASiNRs, the B/N bonded pair doping results in a semiconducting character, where the energy gap of ASINR can be adjusted, dependent on the B/N pair doping sites in ASiNR. For zigzag SiNRs (ZSiNRs), the introduction of the B/N pair results in a transition from nonmagnetic to spin-polarized states, which is attributed to the perturbation of pi and pi states localized at the doped ZSiNR edge. More importantly, the marvelous spin gapless semiconductor character with 100% spin polarized currents around the Fermi level has been obtaind, when the substitutional B/N pair located at the edge or subedge sites in ZSiNIts. These findings present a possible avenue for energy band and magnetism engineering in SiNR and benefit the design of silicene-based electronic devices. 入藏号:WOS:000321542000032 文献类型: Article 语种: English KeyWords Plus: TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; MAGNETIC-PROPERTIES; GRAPHENE; SEMICONDUCTORS; HYDROGENATION 通讯作者地址: Zhang, CW (通讯作者) Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China. 地址: [ 1 ] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China 电子邮件地址: zhchwsd@163.com 基金资助致谢: 基金资助机构 授权号 National Natural Science Foundation of China 61076088 11274143 60471042 Technological Development Program in Shandong Province Education Department J10LA16 [显示基金资助信息] 出版商:AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA Web of Science 类别: Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary 研究方向: Chemistry; Science & Technology - Other Topics; Materials Science IDS 号:179SQ ISSN:1932-7447 |
2楼2013-09-13 16:45:23
baiyuefei
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【答案】应助回帖
★ ★ ★ ★ ★ ★ ★ ★ ★ ★
lhxxuevasp: 金币+10 2013-09-13 16:57:46
oven1986: 检索EPI+1, 感谢你的应助！ 2013-09-13 17:15:57
lhxxuevasp: 金币+10 2013-09-13 16:57:46
oven1986: 检索EPI+1, 感谢你的应助！ 2013-09-13 17:15:57
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2. 目前是未检索到啊，你自己检下吧 http://apps.webofknowledge.com/W ... #searchErrorMessage |
3楼2013-09-13 16:47:25
lhxxuevasp
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4楼2013-09-13 16:57:08
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