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baiyuefei
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- LS-EPI: 1647
- Ó¦Öú: 4642 (¸±½ÌÊÚ)
- ¹ó±ö: 46.969
- ½ð±Ò: 658104
- É¢½ð: 11616
- ºì»¨: 995
- ɳ·¢: 81
- Ìû×Ó: 69424
- ÔÚÏß: 13328.4Сʱ
- ³æºÅ: 676696
- ×¢²á: 2008-12-18
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oven1986: ½ð±Ò+2, ¸ÐлӦÖú£¡ 2013-09-12 10:59:49
shamolvzhou: ½ð±Ò+10 2013-09-12 11:31:35
oven1986: ¼ìË÷EPI+1, ¸ÐлÄãµÄÓ¦Öú£¡ 2013-09-12 14:36:33
oven1986: ½ð±Ò+2, ¸ÐлӦÖú£¡ 2013-09-12 10:59:49
shamolvzhou: ½ð±Ò+10 2013-09-12 11:31:35
oven1986: ¼ìË÷EPI+1, ¸ÐлÄãµÄÓ¦Öú£¡ 2013-09-12 14:36:33
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2Â¥2013-09-12 10:24:00
baiyuefei
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- LS-EPI: 1647
- Ó¦Öú: 4642 (¸±½ÌÊÚ)
- ¹ó±ö: 46.969
- ½ð±Ò: 658104
- É¢½ð: 11616
- ºì»¨: 995
- ɳ·¢: 81
- Ìû×Ó: 69424
- ÔÚÏß: 13328.4Сʱ
- ³æºÅ: 676696
- ×¢²á: 2008-12-18
- ÐÔ±ð: GG
- רҵ: ºÏ³ÉÒ©Îﻯѧ
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oven1986: ½ð±Ò+1, ¸Ðл»ØÌû£¡ 2013-09-12 10:59:57
oven1986: ½ð±Ò+1, ¸Ðл»ØÌû£¡ 2013-09-12 10:59:57
3Â¥2013-09-12 10:24:11
baiyuefei
°æÖ÷ (ÎÄѧ̩¶·)
·çÑ©
- LS-EPI: 1647
- Ó¦Öú: 4642 (¸±½ÌÊÚ)
- ¹ó±ö: 46.969
- ½ð±Ò: 658104
- É¢½ð: 11616
- ºì»¨: 995
- ɳ·¢: 81
- Ìû×Ó: 69424
- ÔÚÏß: 13328.4Сʱ
- ³æºÅ: 676696
- ×¢²á: 2008-12-18
- ÐÔ±ð: GG
- רҵ: ºÏ³ÉÒ©Îﻯѧ
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1. http://apps.webofknowledge.com/f ... age=1&doc=1 First-Principles Study of the Electronic Properties of B/N Atom Doped Silicene Nanoribbons ×÷Õß: Luan, HX (Luan, Hang-Xing)[ 1 ] ; Zhang, CW (Zhang, Chang-Wen)[ 1 ] ; Zheng, FB (Zheng, Fu-Bao)[ 1 ] ; Wang, PJ (Wang, Pei-Ji)[ 1 ] À´Ô´³ö°æÎï: JOURNAL OF PHYSICAL CHEMISTRY C ¾í:117 ÆÚ:26 Ò³:13620-13626 DOI:10.1021/jp4005357 ³ö°æÄê:JUL 4 2013 ±»ÒýƵ´Î: 0 (À´×Ô Web of Science) ÒýÓõIJο¼ÎÄÏ×: 37 [ ²é¿´ Related Records ] ÒýÖ¤¹ØÏµÍ¼ ÕªÒª: On the basis of first-principles calculations, we study the geometric, electronic, and magnetic properties of silicene nanoribbons (SiNRs) doped by the boron/nitrogen (B/N) bonded pair at different sites. Total energies analysis indicate that the B/N pair tends to be doped at the edge of SiNRs and that the B/N pair doping in the armchair SiNRs (ASiNRs) is easier to carry out than the unbonded B/N pair doping in ASiNRs. Different from the metallic states associated with the singly substituted N or B atom at the edge in ASiNRs, the B/N bonded pair doping results in a semiconducting character, where the energy gap of ASINR can be adjusted, dependent on the B/N pair doping sites in ASiNR. For zigzag SiNRs (ZSiNRs), the introduction of the B/N pair results in a transition from nonmagnetic to spin-polarized states, which is attributed to the perturbation of pi and pi states localized at the doped ZSiNR edge. More importantly, the marvelous spin gapless semiconductor character with 100% spin polarized currents around the Fermi level has been obtaind, when the substitutional B/N pair located at the edge or subedge sites in ZSiNIts. These findings present a possible avenue for energy band and magnetism engineering in SiNR and benefit the design of silicene-based electronic devices. Èë²ØºÅ:WOS:000321542000032 ÎÄÏ×ÀàÐÍ: Article ÓïÖÖ: English KeyWords Plus: TOTAL-ENERGY CALCULATIONS; WAVE BASIS-SET; MAGNETIC-PROPERTIES; GRAPHENE; SEMICONDUCTORS; HYDROGENATION ͨѶ×÷ÕßµØÖ·: Zhang, CW (ͨѶ×÷Õß) Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China. µØÖ·: [ 1 ] Univ Jinan, Sch Phys & Technol, Jinan 250022, Shandong, Peoples R China µç×ÓÓʼþµØÖ·: zhchwsd@163.com »ù½ð×ÊÖúÖÂл: »ù½ð×ÊÖú»ú¹¹ ÊÚȨºÅ National Natural Science Foundation of China 61076088 11274143 60471042 Technological Development Program in Shandong Province Education Department J10LA16 [ÏÔʾ»ù½ð×ÊÖúÐÅÏ¢] ³ö°æÉÌ:AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA Web of Science Àà±ð: Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary Ñо¿·½Ïò: Chemistry; Science & Technology - Other Topics; Materials Science IDS ºÅ:179SQ ISSN:1932-7447 |
4Â¥2013-09-13 16:42:56
baiyuefei
°æÖ÷ (ÎÄѧ̩¶·)
·çÑ©
- LS-EPI: 1647
- Ó¦Öú: 4642 (¸±½ÌÊÚ)
- ¹ó±ö: 46.969
- ½ð±Ò: 658104
- É¢½ð: 11616
- ºì»¨: 995
- ɳ·¢: 81
- Ìû×Ó: 69424
- ÔÚÏß: 13328.4Сʱ
- ³æºÅ: 676696
- ×¢²á: 2008-12-18
- ÐÔ±ð: GG
- רҵ: ºÏ³ÉÒ©Îﻯѧ
- ¹ÜϽ: Óлú½»Á÷
5Â¥2013-09-13 16:45:33













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