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[资源] 研究等离子体表面相互作用的一篇博士毕业论文(休斯顿大学)

Study of the plasma surface interactions by the "spinning wall" technique

For the past few decades plasma etching has emerged as a dominant processing
step in integrated-circuit (IC) device manufacturing. Due to the presence of reactive
radicals and ions, plasmas are rich in chemistry and are widely used to etch sub-micron
size features with complete fidelity. Radicals such as CI, F, O etc. are the active species
in the plasma that reacts with the material in the presence of ions forming volatile
products, which leads to material removal. However, in these low pressure plasmas the
radicals are lost to the reactor walls, which affect their number densities in the plasma.
An important parameter to quantify radical loss at the surface is the recombination
coefficient, y, defined as the probability per collision with the surface that an impinging radical will recombine. The surface in contact with the plasma interacts with the radicals,neutrals, ions, electrons, photons etc., which makes the measurement of kinetic parameter like the atom recombination probability a real challenge.A new technique has been developed to study theplasma-surface interactions insitu.
In this technique a cylindrical substrate is rapidly rotated between the plasma and
differentially pumped diagnostic chambers, allowing portions of the surface to be
periodically exposed to the plasma and then analyzed by desorption mass spectrometry and Auger electron spectroscopy. The time elapsed between the plasma exposure and subsequent analysis is controlled by varying the rotation frequency of the substrate.

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附件 1 : Studyoftheplasmasurfaceinteractionsbythespinningwalltechnique.pdf

2013-06-07 08:45:24, 4.49 M